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IPTG020N13NM6

Marking：020N13N6；Package：PG-HSOG-8；MOSFET OptiMOSTM 6 Power-Transistor, 135 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?100avalanchetested ?175°Coperatingtemperature ?Optimizedformotordrivesandbatterypoweredapplications ?Pb-freeleadpla

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IQD020N10NM5

Marking：02010N5；Package：PG-TSON-8；MOSFET OptiMOSTM 5 Power-Transistor, 100 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?Superiorthermalresistance ?100%avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IQD020N10NM5CG

Marking：02010NC；Package：PG-TTFN-9；MOSFET OptiMOSTM 5 Power-Transistor, 100 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?Superiorthermalresistance ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

NCE0202M

Marking：0202M；Package：SOT-89-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE0202Musesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=200V,ID=2A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NVMYS020N08LHTWG

Marking：020N08LH；Package：LFPAK4；MOSFET - Power, Single N-Channel 80 V, 19.5 m, 30 A

Features ?SmallFootprint(5x6mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?LFPAK4Package,IndustryStandard ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVTYS020N08HLTAG

Marking：020N08HL；Package：LFPAK8；MOSFET - Power, Single N-Channel 80 V, 20 m, 30 A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

PB020NE7N3G

Marking：020NE7N；Package：PG-TO263-3；3Power-Transistor

Features Optimizedtechnologyforsynchronousrectification IdealforhighfrequencyswitchingandDC/DCconverters ExcellentgatechargeXRponProduct(FOM) Verylowon-resistanceRosen) N-channel,normallevel 100%avalanchetested Pb-freeplating;RoHScompliant Qualified

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SMD1812B020TF-J

Marking：020.J；Positive Temperature Coefficient (PTC) Data Sheet

Description The1812seriesprovidessurfacemountresettableovercurrentprotectionwith holdingcurrentfrom0.1Ato3.0A.Thisseriesofferscompleteportfoliointermsof holdingcurrentandworkingvoltage,andissuitableforwiderangeofapplication. Features ■RoHScompliantandle

BRIGHTKINGBRIGHTKING (SHENZHEN) CO LTD.

君耀君耀電子

8L30205NLGI

Marking：0205GI；Package：VFQFN；Crystal or Different ial-to-LVCMOS/LVTTL Clock Buffer

IDT

Integrated Device Technology, Inc.

8L30205NLGI8

Marking：0205GI；Package：VFQFN；Crystal or Different ial-to-LVCMOS/LVTTL Clock Buffer

IDT

Integrated Device Technology, Inc.

詳細(xì)參數(shù)

  • 型號(hào)：

    020

  • 制造商：

    Virginia Plastics

  • 功能描述：

    ELECTRONIC COMPONENT

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村田
15+
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10000
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ApexToolGroup/CooperTool
新
5
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SUYIN
24+
207
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N/A
24+/25+
3474
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EMC
2020+
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316
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SUYINCORPORATION
16+
NA
8800
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PASSIVE
15000
WLS
999999
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上海貝嶺
23+
QFN
15000
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HIMARK
23+
QSOP24
5000
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EMC2
24+
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5000
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更多020供應(yīng)商 更新時(shí)間2025-6-26 8:01:00

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