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IPA030N10N3G

Marking：030N10N；Package：PG-TO220-FP；OptiMOSTM3 Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD030N03LF2S

Marking：030N03F2；Package：PG-TO252-3；MOSFET StrongIRFET? 2 Power?Transistor, 30 V

Features ?Optimizedforawiderangeofapplications ?N?channel,logiclevel ?100%avalanchetested ?175°Crated ?Pb?freeleadplating;RoHScompliant ?Halogen?freeaccordingtoIEC61249?2?21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP030N06NF2S

Marking：030N06NS；Package：PG-TO220-3；StrongIRFETTM2 Power-Transistor

Features ?Optimizedforwiderangeofapplications ?N-channel,normallevel ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP030N10NF2S

Marking：030N10NS；Package：PG-TO220-3；MOSFET StrongIRFET? 2 Power?Transistor, 100 V

Features ?Optimizedforawiderangeofapplications ?N?channel,normallevel ?100%avalanchetested ?Pb?freeleadplating;RoHScompliant ?Halogen?freeaccordingtoIEC61249?2?21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IQE030N06NM5

Marking：03006N5；Package：PG-TSON-8-4；MOSFET OptiMOS?M 5 Power-Transistor, 60 V

Features ?Optimizedforsynchronousrectification ?100avalanchetested ?Superiorthermalresistance ?N-channel,normallevel ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IQE030N06NM5CG

Marking：03006C5；Package：PG-TTFN-9-1；MOSFET OptiMOS? 5 Power-Transistor, 60 V

Features ?Optimizedforsynchronousrectification ?100avalanchetested ?Superiorthermalresistance ?N-channel,normallevel ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ISC030N10NM6

Marking：030N10N6；Package：PG-TDSON-8FL；OptiMOSTM 6 Power-Transistor, 100 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?Highavalancheenergyrating ?175°Coperatingtemperature ?Optimizedforhighfrequencyswitchingandsynchronousrectification ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ISC030N12NM6

Marking：03012N6；Package：PG-TSON-8；OptiMOSTM 6 Power-Transistor, 120 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?Highavalancheenergyrating ?175°Coperatingtemperature ?Optimizedforhighfrequencyswitchingandsynchronousrectification ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PMEG030V030EPE

Marking：030VU03E；Package：CFP15B；30 V, 3 A low VF Schottky barrier rectifier

1.Generaldescription PlanarLowVFSchottkybarrierrectifierencapsulatedinaCFP15B(SOT1289B)powerandflat leadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Verylowforwardvoltage ?Highpowercapabilityduetoclip-bondtechnology ?SmallandthinSMD

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PMEG030V030EPE-Q

Marking：030V；Package：CFP15B；30 V, 3 A low VF Schottky barrier rectifier

1.Generaldescription PlanarLowVFSchottkybarrierrectifierencapsulatedinaCFP15B(SOT1289B)powerandflat leadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Verylowforwardvoltage ?Highpowercapabilityduetoclip-bondtechnology ?SmallandthinSMD

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

詳細(xì)參數(shù)

  • 型號：

    030

  • 制造商：

    Farnell/Pro-Power

  • 功能描述：

    WIRE BU BS6231 BLUE 1.5MM 100M

  • 制造商：

    pro-power

  • 功能描述：

    WIRE, BU, BS6231, BLUE, 1.5MM, 100M

  • 制造商：

    PRIVATE LABEL

  • 功能描述：

    WIRE, BU, BS6231, BLUE, 1.5MM, 100M, Reel

  • Length(Imperial)：

    328ft, Reel Length(

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Infineon
17+
TO-220
6200
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24+
40000
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LITTLEFUSE
24+
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1250
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SOP
650
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AMI
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PLCC-68
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COILCRAFT
2016+
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只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
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更多030供應(yīng)商 更新時間2025-7-5 10:31:00

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