ADS08A60

Marking：08A60；Package：TO-92；SCRs

GeneralDescription SensitivetriggeringSCRissuitablefortheapplicationwheregatecurrent limitedsuchassmallmotorcontrol，Earthleakagecircuitbreakersor GroundFaultCircuitInterrupters(GFCI)，Solidstaterelays，General purposeswitching，Smallengineignition。 Features ◆R

BSC080N03LSG

Marking：080N03LS；Package：TDSON-8；OptiMOS?? Power-MOSFET

Features ?FastswitchingMOSFETforSMPS ?OptimizedtechnologyforDC/DCconverters ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel;Logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Superiorthermalresistance ?Avalanc

BSC080N12LS

Marking：080N12LS；Package：PG-TDSON-8；OptiMOSTM 3 Power-Transistor, 120 V

Features ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?150°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?Idealforhigh-frequencyswitchingandsynchronousrectification ?Halogen-freeaccordingtoIEC61249-2-

BSC088N15LS5

Marking：088N15LS；Package：PG-TDSON-8；MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features ?N-channel,logiclevel ?Verylowon-resistanceRDS(on) ?Superiorthermalresistance ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

BSG0812ND

Marking：0812ND；Package：PG-TISON8-4；Power Block

Features ?DualasymmetricN-channelOptiMOS?5MOSFET ?Logiclevel(4.5Vrated) ?Pb-freeleadplating;RoHScompliant ?Optimizedforhighperformancebuckconverters ?Halogen-freeaccordingtoIEC61249-2-21 ?QualifiedaccordingtoJEDEC1)fortargetapplications

ESD08V32D-A

Marking：08W/8AW；Package：SOD-323；Transient Voltage Suppressors for ESD Protection

Feature 240~408WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsoneI/Olineorpowerline(Unidirectional) Lowclampingvoltage Workingvoltages:3.3V~36V Lowleakagecurrent IEC61000-4-2(ESD)±30kV(air),±30kV(contact): 3.3V~15V); IEC61000-4-2(ESD)±15kV(air),±15kV(contact)

ESD08V32DS-A

Marking：08W/8AW；Package：SOD-323；Transient Voltage Suppressors for ESD Protection

Feature MoistureSensitivityLevel(MSL-1) AEC-Q101qualified 240~408WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsoneunidirectionalI/Olineorpowerline LowClampingVoltage WorkingVoltages:3.3V~36V Lowleakagecurrent IEC61000-4-4(EFT):40A(5/50ηs) IEC61000-4-2(ESD)±30k

ESDSOT08C

Marking：08C；Package：SOT-23；Dual Transient Voltage Suppressors for ESD Protection

Features SOT-23Package 2UnidirectionalTransilfunctions PeakPowerDissipation300W@8x20usPulse LowLeakage FastResponseTime

GAN080-650EBE

Marking：080IEBE；Package：SOT8074-1；650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

1.Generaldescription TheGAN080-650EBEisageneralpurpose650V,80mΩGalliumNitride(GaN)FETinaDFN 8mmx8mmsurfacemountpackage.Itisanormally-offe-modedeviceofferingsuperior performance. 2.Featuresandbenefits ?Enhancementmode-normally-offpowerswitch ?Ultrah

IPA082N10NF2S

Marking：082N10NS；Package：PG-TO220FullPAK；StrongIRFETTM2Power-Transistor

Features ?Optimizedforawiderangeofapplications ?N-Channel,normallevel ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21