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1SS302

UltraHighSpeedSwitchingApplications

UltraHighSpeedSwitchingApplications ●Smallpackage:SC-70 ●Lowforwardvoltage:VF(3)=0.90V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:CT=0.9pF(typ.)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

1SS302

UltraHighSpeedSwitchingApplications

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

1SS302

DIODE(ULTRAHIGHSPEEDSWITCHINGAPPLICATIONS)

UltraHighSpeedSwitchingApplications ●Smallpackage:SC-70 ●Lowforwardvoltage:VF(3)=0.90V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:CT=0.9pF(typ.)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

1SS302

ULTRAHIGHSPEEDSWITCHINGAPPLICATIONS

Features ●Lowforwardvoltage:VF(3)=0.9V(Typ) ●Fastreverserecoverytime:trr=1.6ns(Typ) ●Smalltotalcapacitance:CT=0.9pF(Typ)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

1SS302

UltraHighSpeedSwitchingApplications

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

1SS302

SOT-323Plastic-EncapsulateDiodes

FEATURES Forhigh-speedswitchingapplications Connectedinseries

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

1SS302A

SwitchingDiodesSiliconEpitaxialPlanar

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

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