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1SS352

SiliconEpitaxialPlanarSwitchingDiode

Features ?Lowforwardvoltage ?FastReverseRecoveryTime ?SmallTotalCapacitance Application ?Ultrahighspeedswitching

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

1SS352

UltraHighSpeedSwitchingApplication

UltraHighSpeedSwitchingApplication ?Smallpackage ?Lowforwardvoltage:VF(3)=0.98V(typ.) ?Fastreverserecoverytime:trr=1.6ns(typ.) ?Smalltotalcapacitance:CT=0.5pF(typ.)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

1SS352

SILICONEPITAXIALPLANARDIODE

SILICONEPITAXIALPLANARDIODE Features ?Lowforwardvoltage ?FastReverseRecoveryTime ?SmallTotalCapacitance Application ?Ultrahighspeedswitching

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導體先之科半導體科技(東莞)有限公司

1SS352

ULTRAHIGHSPEEDSWITCHINGAPPLICATIONDIODE

ULTRAHIGHSPEEDSWITCHINGAPPLICATIONDIODE Features SmallPackage Lowforwardvoltage:VF(3)=0.98(Typ) Fastreverserecoverytime:trr=1.6ns(Typ) Smalltotalcapacitance:CT=0.5pF(Typ)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

1SS352

UltraHighSpeedSwitchingApplication

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

1SS352

DIODE(ULTRAHIGHSPEEDSWITCHINGAPPLICATION)

UltraHighSpeedSwitchingApplication ?Smallpackage ?Lowforwardvoltage:VF(3)=0.98V(typ.) ?Fastreverserecoverytime:trr=1.6ns(typ.) ?Smalltotalcapacitance:CT=0.5pF(typ.)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

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