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1SS361

UltraHighSpeedSwitchingApplication

UltraHighSpeedSwitchingApplication Smallpackage Lowforwardvoltage:VF(3)=0.9V(typ.) Fastreverserecoverytime:trr=1.6ns(typ.) Smalltotalcapacitance:CT=0.9pF(typ.)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

1SS361

UltraHighSpeedSwitchingApplication

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

1SS361

DIODE(ULTRAHIGHSPEEDSWITCHINGAPPLICATION)

UltraHighSpeedSwitchingApplication ●Smallpackage ●Lowforwardvoltage:VF=0.9V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:CT=0.9pF(typ.)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

1SS361CT

UltraHighSpeedSwitchingApplication

UltraHighSpeedSwitchingApplication Smallpackage Lowforwardvoltage:VF(3)=0.9V(typ.) Fastreverserecoverytime:trr=1.6ns(typ.) Smalltotalcapacitance:CT=0.9pF(typ.)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

1SS361F

UltraHighSpeedSwitchingApplications

UltraHighSpeedSwitchingApplications ●Smallpackage:1608Flatlead ●Excellentinforwardcurrentandforwardvoltagecharacteristics:VF(3)=0.9V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:CT=0.9pF(typ.)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

1SS361FV

Ultra-High-SpeedSwitchingApplications

Ultra-High-SpeedSwitchingApplications ●Smallpackage ●Excellentinforwardcurrentandforwardvoltagecharacteristics:VF(3)=0.9V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:CT=0.9pF(typ.)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

1SS361UDJ

DUALSURFACEMOUNTSWITCHINGDIODE

Features ?FastSwitchingSpeed ?Ultra-SmallSurfaceMountPackage(1.0x0.8mm) ?Ultra-LowProfilePackage(0.45mm) ?LowForwardVoltage:typof0.62VatIF=1.0mA ?FastReverseRecovery:maxof4.0ns ?LowCapacitance:maxof3.0pF ?LowReverseLeakageCurrent ?IdealforBatteryP

DIODESDiodes Incorporated

美臺半導(dǎo)體

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