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1SS387

SURFACEMOUNTFASTSWITCHINGDIODE

SiliconEpitaxialPlanarDieConstruction FastSwitchingSpeed SurfaceMountPackageIdeallySuitedfor AutomaticInsertion ForGeneralPurposeSwitchingApplications PlasticMaterial–ULRecognitionFlammability Classification94V-0

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

1SS387

HighSpeedSwitchingDiode

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

1SS387

TOSHIBADiodeSiliconEpitaxialPlanarType

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

1SS387

HighSpeedSwitchingDiode

DSK

Diode Semiconductor Korea

1SS387

HighSpeedSWITCHINGDiode

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司

1SS387

HighSpeedSwitchingDiode

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

辰達(dá)半導(dǎo)體深圳辰達(dá)半導(dǎo)體有限公司

1SS387

Lowforwardvoltage

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

1SS387

TOSHIBADiodeSiliconEpitaxialPlanarType

SwitchingDiodesSiliconEpitaxialPlanar Features (1)Smallpackage (2)Lowforwardvoltage:VF(3)=0.98V(typ.) (3)Fastreverserecoverytime:trr=1.6ns(typ.) (4)Smalltotalcapacitance:Ct=0.5pF(typ.) Applications ?Ultra-High-SpeedSwitching

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

1SS387

HighSpeedSwitchingDiodes

HighSpeedSwitchingDiodes Features Lowforwardvoltage. Fastreverserecoverytime. Smalltotalcapacitance. Applications ?High-speedswitchinginsurfacemountedcircuits. ?

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

1SS387

DIODE(ULTRAHIGHSPEEDSWITCHINGAPPLICATION)

UltraHighSpeedSwitchingApplication Compact2-pinpackage–idealforhigh-densitymounting Lowforwardvoltage:VF(3)=0.98V(typ.) Fastreverserecoverytime:trr=1.6ns(typ.) Smalltotalcapacitance:CT=0.5pF(typ.)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

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