首頁(yè) >1SS387(TPL3.F>規(guī)格書列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SURFACEMOUNTFASTSWITCHINGDIODE SiliconEpitaxialPlanarDieConstruction FastSwitchingSpeed SurfaceMountPackageIdeallySuitedfor AutomaticInsertion ForGeneralPurposeSwitchingApplications PlasticMaterial–ULRecognitionFlammability Classification94V-0 | WTEWon-Top Electronics 毅星電子毅星電子股份有限公司 | WTE | ||
HighSpeedSwitchingDiode | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司 | JIANGSU | ||
TOSHIBADiodeSiliconEpitaxialPlanarType | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
HighSpeedSwitchingDiode | DSK Diode Semiconductor Korea | DSK | ||
HighSpeedSWITCHINGDiode | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司 | WINNERJOIN | ||
HighSpeedSwitchingDiode | CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd. 辰達(dá)半導(dǎo)體深圳辰達(dá)半導(dǎo)體有限公司 | CHENDA | ||
Lowforwardvoltage | SKTECHNOLGYSHIKE Electronics 時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司 | SKTECHNOLGY | ||
TOSHIBADiodeSiliconEpitaxialPlanarType SwitchingDiodesSiliconEpitaxialPlanar Features (1)Smallpackage (2)Lowforwardvoltage:VF(3)=0.98V(typ.) (3)Fastreverserecoverytime:trr=1.6ns(typ.) (4)Smalltotalcapacitance:Ct=0.5pF(typ.) Applications ?Ultra-High-SpeedSwitching | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
HighSpeedSwitchingDiodes HighSpeedSwitchingDiodes Features Lowforwardvoltage. Fastreverserecoverytime. Smalltotalcapacitance. Applications ?High-speedswitchinginsurfacemountedcircuits. ? | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 魯光電子深圳市魯光電子科技有限公司 | LUGUANG | ||
DIODE(ULTRAHIGHSPEEDSWITCHINGAPPLICATION) UltraHighSpeedSwitchingApplication Compact2-pinpackage–idealforhigh-densitymounting Lowforwardvoltage:VF(3)=0.98V(typ.) Fastreverserecoverytime:trr=1.6ns(typ.) Smalltotalcapacitance:CT=0.5pF(typ.) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|
