首頁 >絲印反查>21

零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

ESDTU5V0A1

Marking：21；Package：DFN1006；ULTRA LOW CAPACITANCE BIDIRECTIONAL TVS DIODE

Features Ultralowleakage:nAlevel Operatingvoltage:5V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-4(EFT)40A(5/50ns) –IEC61000-4-5(Lightning)4.5A(8/20μs) RoHSCompliant

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

IP4223CZ6

Marking：21；Package：SOT457；Dual USB 2.0 integrated ESD protection

1.1Generaldescription TheIP4223CZ6isdesignedtoprotectI/Olinessensitivetocapacitiveload,suchas USB2.0,ethernet,DigitalVideoInterface(DVI)andsoon,fromdamagedueto ElectroStaticDischarge(ESD).Itincorporatesfourpairsofultralowcapacitancerail-to-rail ESDprotec

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

NJW4104U3-33B-T1

Marking：21；Package：SOT-89-3；45V Io=200mA Ultra low Quiescent current LDO

■FEATURES ●LowQuiescentCurrent5.5μAtyp.(Aversion) 5.0μAtyp.(Bversion) ●OperatingVoltage4.0Vto40V ●OperatingTemperatureTa=-40Cto125°C ●OutputVoltageAccuracyVO1.0(Ta=25C) VO2.0(Ta=-40Cto125°C) ●OutputCurrentIO(min.)=200mA ●ON/OFFControlAver.only ●Corres

NJRCNew Japan Radio

新日本無線株式會社

PDTA123ET

Marking：21；Package：SOT23；PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver. DESCRIPTION PNPresistor-equippedtransistor(see“Simplif

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PDTA123ET

Marking：21；Package：SOT23；PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PEMH13

Marking：21；Package：SOT666；50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 47 kΩ

1.Generaldescription NPN/NPNdoubleResistor-EquippedTransistor(RET)inanultrasmallandflatleadSOT666 Surface-MountedDevice(SMD)plasticpackage. NPN/PNPcomplement:PEMD13 PNP/PNPcomplement:PEMB13 2.Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasr

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PESD5V0F1BL

Marking：21；Package：DFN1006；ULTRA LOW CAPACITANCE BIDIRECTIONAL TVS DIODE

Features Ultralowleakage:nAlevel Operatingvoltage:5V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-4(EFT)40A(5/50ns) –IEC61000-4-5(Lightning)4.5A(8/20μs) RoHSCompliant

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

PESD5V0X1BL

Marking：21；Package：DFN1006；ULTRA LOW CAPACITANCE BIDIRECTIONAL TVS DIODE

Features Ultralowleakage:nAlevel Operatingvoltage:5V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-4(EFT)40A(5/50ns) –IEC61000-4-5(Lightning)4.5A(8/20μs) RoHSCompliant

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

PESDMC2FD5VB

Marking：21；Package：DFN1006；ULTRA LOW CAPACITANCE BIDIRECTIONAL TVS DIODE

Features Ultralowleakage:nAlevel Operatingvoltage:5V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-4(EFT)40A(5/50ns) –IEC61000-4-5(Lightning)4.5A(8/20μs) RoHSCompliant

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

PESDR0521P1

Marking：21；Package：DFN1006-2；ESD Protection Devices ROHS

Features Ultrasmallpackage:1.0x0.6x0.5mm Ultralowcapacitance:0.3pFtypical Ultralowleakage:nAlevel Operatingvoltage:5V Lowclampingvoltage 2-pinleadlesspackage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±25kV Contactdischarge:±2

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    21

  • 制造商：

    Harting Technology Group

  • 功能描述：

    SEALING CAP M12 Plastic

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
TI
1114+
SOP20
730
全新原裝公司現(xiàn)貨
詢價(jià)
TI
23+
SOP20
730
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
Superior Electric
2022+
93
全新原裝 貨期兩周
 詢價(jià)
APEM
20+
開關(guān)元件
96
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
BURR-BROWN
22+
SSOP16
25000
只做原裝,原裝,假一罰十
 詢價(jià)
2Pai Semi/榮湃
2024+
SOIC-8
500000
誠信服務(wù),絕對原裝原盤
 詢價(jià)
2Pai Semi(榮湃)
2025+
SOIC-8
52637
詢價(jià)
2Pai Semi
2411
SOIC-8
2500
詢價(jià)
MICROCHIP/微芯
2447
SSOP28
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價(jià)
MICROCHIP/微芯
24+
TSSOP
9600
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實(shí)單!
 詢價(jià)
更多21供應(yīng)商 更新時間2025-6-29 14:01:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多