D6V3H1US2LP4-7B

Marking：2N；Package：X2-DFN1006-2；ONE CHANNEL UNIDIRECTIONAL TVS

Features ?LowProfilePackage(0.40mmMax)andUltra-SmallPCBFootprint Area(1.1mm×0.7mmMax)SuitableforCompactPortable Electronics ?ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV ?ProvidesSurgeandLightningProtectionperIEC61000-4-5 Standard:I

ESD36V32D-C

Marking：2N；Package：SOD-323；Transient Voltage Suppressors for ESD Protection

Feature 255~416WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsoneI/Olineorpowerline(Bidirectional) Lowclampingvoltage Workingvoltages:3.3V~48V Lowleakagecurrent IEC61000-4-2(ESD)±30kV(air),±30kV(contact): 3.3V~18V); IEC61000-4-2(ESD)±15kV(air),±15kV(contact):

ESD36V32DS-C

Marking：2N；Package：SOD-323；Transient Voltage Suppressors for ESD Protection

Feature MoistureSensitivityLevel(MSL-1) AEC-Q101qualified 255~410WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsonebidirectionalI/Olineorpowerline LowClampingVoltage WorkingVoltages:3.3V~48V Lowleakagecurrent IEC61000-4-4(EFT):40A(5/50ηs) IEC61000-4-2(ESD)±30kV

MM3Z24

Marking：2N；Silicon Planar Zener Diodes

FEATURES ?Totalpowerdissipation:Max.200mW. ?Widezenerreversevoltagerange2.0Vto75V. ?Smallplasticpackagesuitableforsurfacemounteddesign. ?Toleranceapproximately±5

PBSS4260PAN

Marking：2N；Package：DFN2020-6；60 V, 2 A NPN/NPN low VCEsat (BISS) transistor

1.Generaldescription NPN/NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadless mediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/PNPcomplement:PBSS4260PANP.PNP/PNPcomplement:PBSS5260PAP. 2.Featuresandbenefits ?Verylowcollec

PMEG100T10ELXD

Marking：2N；Package：CFP2-HP；100 V, 1 A Trench Schottky barrier rectifier

1.Generaldescription TrenchSchottkybarrierrectifierencapsulatedinaCFP2-HP(SOD323HP)powerflatleadSurface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Lowforwardvoltage ?LowQrrandlowIRM ?Lowleakagecurrent ?Highpowercapabilityduetoclip-bondi

PMEG100T10ELXD-Q

Marking：2N；Package：CFP2-HP；100 V, 1 A Trench Schottky barrier rectifier

1.Generaldescription TrenchSchottkybarrierrectifierencapsulatedinaCFP2-HP(SOD323HP)powerflatleadSurface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Lowforwardvoltage ?LowQrrandlowIRM ?Lowleakagecurrent ?Highpowercapabilityduetoclip-bondi

PMV213SN

Marking：2N；Package：SOT23；N-channel TrenchMOS standard level FET

1.Generaldescription N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS technology. 2.Featuresandbenefits ?Lowon-stateresistanceinasmallsurfacemountpackage 3.Applications ?DC-to-DCprimarysideswitching

RT8249CGQW

Marking：2N；Package：WQFN-20L；Dual-Channel Synchronous DC/DC Step-Down Controller with 5V/3.3V LDOs

GeneralDescription TheRT8249A/B/Cisadual-channelstep-down,controller generatingsupplyvoltagesforbattery-poweredsystems. ItincludestwoPulse-WidthModulation(PWM)controllers adjustablefrom2Vto5.5V,andtwofixed5V/3.3Vlinear regulators.Eachlinearregulatorprovidesupt

SD36C

Marking：2N；Package：SOD323；Bl-directional TVS Diode

Features *250Wpeakpulsepower(8/20ps) *Protectsonedataorpowerline *Ultralowleakage:nAlevel *Operatingvoltage:36V *Ultralowclampingvoltage *Complieswithfollowingstandards: —IEC61000-4-2(ESD)immunitytest Airdischarge:￡30kV Contactdischarge:+￡30kV —IEC61000