首頁(yè) >2SA1020-O(FM)>規(guī)格書列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
2SA1020PT | CHENMKOCHENMKO ENTERPRISE CO., LTD. 力勤力勤股份有限公司 | CHENMKO | ||
OneWattHighCurrentPNPTransistorVOLTAGEANDCURRENTARENEGATIVEFORPNPTRANSISTORS OneWattHighCurrentPNPTransistor Features ?Pb?FreePackagesareAvailable* | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
OneWattHighCurrentPNPTransistorVOLTAGEANDCURRENTARENEGATIVEFORPNPTRANSISTORS OneWattHighCurrentPNPTransistor Features ?Pb?FreePackagesareAvailable* | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
TO-92Plastic-EncapsulateTransistors Features Powermplifierpplications | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
TO-92MODPlastic-EncapsulateTransistors FEATURES PowerAmplifierApplications | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
TOSHIBATransistorSiliconPNPEpitaxialType(PCTProcess) PowerAmplifierApplications PowerSwitchingApplications ?LowCollectorsaturationvoltage:VCE(sat)=?0.5V(max)(IC=?1A) ?Highcollectorpowerdissipation:PC=900mW ?High-speedswitching:tstg=1.0μs(typ.) ?Complementaryto2SC2655 | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
PNPSiliconEpitaxialTransistor PNPSiliconEpitaxialTransistor Poweramplifierapplication Powerswitchingapplication | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半導(dǎo)體先之科半導(dǎo)體科技（東莞）有限公司 | SEMTECH_ELEC | ||
PNPEPITAXIALSILICONTRANSISTOR DESCRIPTION TheUTC2SA1020isdesignedforpoweramplifierandpowerswitchingapplications. FEATURES *Lowcollectorsaturationvoltage:VCE(SAT)=-0.5V(MAX)(IC=-1A) *Highspeedswitchingtime:tSTG=1.0μs(TYP) *ComplementtoUTC2SC2655 | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|
