首頁 >2SA1160-B(F)>規(guī)格書列表
| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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TRANSISTOR(PNP) FEATURE PowerdissipationPCM:0.9W(Tamb=25℃) CollectorcurrentICM:-2A Collector-basevoltageV(BR)CBO:-20V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳深圳市永而佳實(shí)業(yè)有限公司 | WINNERJOIN | ||
SiliconPNPtransistorinaTO-92LMPlasticPackage Descriptions SiliconPNPtransistorinaTO-92LMPlasticPackage Features HighDCcurrentgainandexcellenthFElinearity,lowsaturationvoltage. Applications Strobeflash,mediumpoweramplifierapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司 | FOSHAN | ||
TO-92LPlastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●HighDCCurrentGainandExcellenthFELinearity ●LowSaturationVoltage | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | JIANGSU | ||
StrobeFlashApplicationsMediumPowerAmplifierApplications | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
TRANSISTOR(STROBEFLASH,MEDIUMPOWERAMPLIFIERAPPLICATIONS) StrobeFlashApplications MediumPowerAmplifierApplications ?HighDCcurrentgainandexcellenthFElinearity :hFE(1)=140to600(VCE=?1V,IC=?0.5A) :hFE(2)=60(min),120(typ.)(VCE=?1V,IC=?4A) ?Lowsaturationvoltage :VCE(sat)=?0.5V(max)(IC=?2 | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
StrobeFlashApplicationsMediumPowerAmplifierApplications | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
Plastic-EncapsulatedTransistors TRANSISTOR(PNP) FEATURE PowerdissipationPCM:0.9W(Tamb=25℃) CollectorcurrentICM:-2A Collector-basevoltageV(BR)CBO:-20V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | TELTokyo Electron Ltd. 東電電子東京電子有限公司 | TEL |
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