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2SA1160

TRANSISTOR(PNP)

FEATURE PowerdissipationPCM:0.9W(Tamb=25℃) CollectorcurrentICM:-2A Collector-basevoltageV(BR)CBO:-20V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳深圳市永而佳實(shí)業(yè)有限公司

2SA1160

SiliconPNPtransistorinaTO-92LMPlasticPackage

Descriptions SiliconPNPtransistorinaTO-92LMPlasticPackage Features HighDCcurrentgainandexcellenthFElinearity,lowsaturationvoltage. Applications Strobeflash,mediumpoweramplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

2SA1160

TO-92LPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●HighDCCurrentGainandExcellenthFELinearity ●LowSaturationVoltage

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

2SA1160

StrobeFlashApplicationsMediumPowerAmplifierApplications

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SA1160

TRANSISTOR(STROBEFLASH,MEDIUMPOWERAMPLIFIERAPPLICATIONS)

StrobeFlashApplications MediumPowerAmplifierApplications ?HighDCcurrentgainandexcellenthFElinearity :hFE(1)=140to600(VCE=?1V,IC=?0.5A) :hFE(2)=60(min),120(typ.)(VCE=?1V,IC=?4A) ?Lowsaturationvoltage :VCE(sat)=?0.5V(max)(IC=?2

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SA1160

StrobeFlashApplicationsMediumPowerAmplifierApplications

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SA1160

Plastic-EncapsulatedTransistors

TRANSISTOR(PNP) FEATURE PowerdissipationPCM:0.9W(Tamb=25℃) CollectorcurrentICM:-2A Collector-basevoltageV(BR)CBO:-20V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

TELTokyo Electron Ltd.

東電電子東京電子有限公司

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