首頁 >2SA1162-GR,LF(T>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
PNPSiliconPlastic-EncapsulateTransistor Features ?Capableof0.15WattsofPowerDissipation. ?Collector-current:0.15A ?Collector-baseVoltage:-50V ?Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C ?EpoxymeetsUL94V-0flammabilityrating ?MoisureSensitivityLevel1 ????????LeadFreeFinish/RoHS | MCCMicro Commercial Components 美微科美微科半導體股份有限公司 | MCC | ||
PNPTransistors | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
PNPSiliconPlastic-EncapsulateTransistor | MCCMicro Commercial Components 美微科美微科半導體股份有限公司 | MCC | ||
PNPTransistors ■Features ●Highvoltageandhighcurrent ●HighhFE:hFE=70~400 ●Lownoise:NF=1dB(typ.),10dB(max) ●Complementaryto2SC2712 | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風微電子廣東佑風微電子有限公司 | YFWDIODE | ||
PNPTransistors | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess) AudioFrequencyGeneralPurposeAmplifierApplications ?Highvoltageandhighcurrent:VCEO=?50V,IC=?150mA(max) ?ExcellenthFElinearity:hFE(IC=?0.1mA)/hFE(IC=?2mA) =0.95(typ.) ?HighhFE:hFE=70~400 ?Lownoise:NF=1dB(typ.), | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
PNPTransistors ■Features ●Highvoltageandhighcurrent ●HighhFE:hFE=70~400 ●Lownoise:NF=1dB(typ.),10dB(max) ●Complementaryto2SC2712 | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑風微電子廣東佑風微電子有限公司 | YFWDIODE | ||
TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess) AudioFrequencyGeneralPurposeAmplifierApplications ?Highvoltageandhighcurrent:VCEO=?50V,IC=?150mA(max) ?ExcellenthFElinearity:hFE(IC=?0.1mA)/hFE(IC=?2mA) =0.95(typ.) ?HighhFE:hFE=70~400 ?Lownoise:NF=1dB(typ.), | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
PNPSiliconPlastic-EncapsulateTransistor | MCCMicro Commercial Components 美微科美微科半導體股份有限公司 | MCC | ||
PNPTransistors | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN |
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