首頁 >2SA1586-Y,LXGF(T>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
AudioFrequencyGeneralPurposeAmplifierApplications | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
TRANSISTOR(PNP) FEATURES ●HighDCCurrentGain ●HighVoltageandHighCurrent. ●Complementaryto2SC4116 ●SmallPackage APPLICATIONS ●GeneralPurposeAmplification. | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金譽(yù)半導(dǎo)體深圳市金譽(yù)半導(dǎo)體股份有限公司 | HTSEMI | ||
PNPSiliconPlasticEncapsulatedTransistor FEATURES HighDCCurrentGain HighVoltageandHighCurrent Complementaryto2SC4116 SmallPackage APPLICATIONS GeneralPurposeAmplification | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
SiliconPNPEpitaxial ■Features ●HighDCCurrentGain ●HighVoltageandHighCurrent. ●Complementaryto2SC4116 ●SmallPackage | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
TRANSISTOR(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS) AudioFrequencyGeneralPurposeAmplifierApplications ?Highvoltageandhighcurrent:VCEO=?50V,IC=?150mA(max) ?ExcellenthFElinearity:hFE(IC=?0.1mA)/hFE(IC=?2mA)=0.95(typ.) ?HighhFE:hFE=70~400 ?Lownoise:NF=1dB(typ.),10dB(max) ?Complementary | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
PNPSiliconEpitaxialPlanarTransistor | BILINGalaxy Semi-Conductor Holdings Limited 銀河微電常州銀河世紀(jì)微電子股份有限公司 | BILIN | ||
PNPSiliconEpitaxialPlanarTransistor FEATURES ●Highvoltageandhighcurrent. ●ExcellentHFELinearity. ●HighhFElinearity. ●Complementaryto2SC4116. APPLICATIONS ●Audiofrequencygeneralpurposeamplifierapplications. | BILINGalaxy Semi-Conductor Holdings Limited 銀河微電常州銀河世紀(jì)微電子股份有限公司 | BILIN | ||
SOT-323Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●HighDCCurrentGain ●HighVoltageandHighCurrent. ●Complementaryto2SC4116 ●SmallPackage APPLICATIONS ●GeneralPurposeAmplification. | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | JIANGSU | ||
AudioFrequencyGeneralPurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications ?Highvoltageandhighcurrent:VCEO=?50V,IC=?150mA(max) ?ExcellenthFElinearity:hFE(IC=?0.1mA)/hFE(IC=?2mA)=0.95(typ.) ?HighhFE:hFE=70~400 ?Lownoise:NF=1dB(typ.),10dB(max) ?Complementary | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
SOT-323Plastic-EncapsulateTransistors FEATURES HighDCCurrentGain HighVoltageandHighCurrent. Complementaryto2SC4116 SmallPackage APPLICATIONS GeneralPurposeAmplification. | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
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