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2SB1574

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-50V(Min) ·DCCurrentGain- :hFE=120(Min)@IC=-0.2A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SB1574

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-50V(Min) ·DCCurrentGain- :hFE=120(Min)@IC=-0.2A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SB1574

SiliconPNPEpitaxialPlanarType

Features Possibletotsolderradiationfindirectlytoprintedcircuitboad. Typewithuniversalcharacteristics. Highcollector-basevoltage(Emitteropen)VCBO. Highcollector-emittervoltage(Baseopen)VCEO. LargecollectorcurrentIC.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SB1574

SiliconPNPepitaxialplanartype(Forlow-frequencyoutputamplification)

Forlow-frequencyoutputamplification ■Features ●Possibletosolderradiationfindirectlytoprintedcicuitboad ●Typewithuniversalcharacteristics ●Collectorbreakdownvoltage:VCBO/VCEO=–50V ●Collectorcurrent:IC=–2A

PanasonicPanasonic Semiconductor

松下松下電器

2SB1574-R

PNPTransistors

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SB1574-S

PNPTransistors

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

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