首頁 >2SC2223(M)-T1B>規(guī)格書列表
| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
NPN-Generalusetransistor NPN-Generalusetransistor225mW50m20V Qualitylevelandexecutivestandard ◆“G”level QZJ840611Q/FRQZJ123-2007 ◆theⅡlevelofnationalstandard GB4589.1-89GB/T12560-1999Q/FR124-2007 Applications：Canbeusedforswitchingandamplifyingin variousele | SKTECHNOLGYSHIKE Electronics 時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司 | SKTECHNOLGY | ||
OldCompanyNameinCatalogsandOtherDocuments | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
TRANSISTOR(NPN) FEATURES PowerdissipationPCM:150mW(Tamb=25℃) CollectorcurrentICM:20mA Collector-basevoltageV(BR)CBO:30V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳深圳市永而佳實(shí)業(yè)有限公司 | WINNERJOIN | ||
NPNSiliconEpitaxialTransistor ■Features ●CollectorCurrentCapabilityIC=20mA ●CollectorEmitterVoltageVCEO=20V | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
HIGHFREQUENCYAMPLIFIERNPNSILICONEPITAXIALTRANSISTORMINIMOLD DESCRIPTION The2SC2223isdesignedforuseinsmalltypeequipmentsespeciallyrecommendedforHybridIntergratedCircuitandotherapplications. Features ●Micropackage. ●Highgainbandwidthproduct.fT=600MHzTYP. ●Lowoutputcapacitance.Cob=1.0pFTYP. | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
NPNTransistors ■Features ●CollectorCurrentCapabilityIC=20mA ●CollectorEmitterVoltageVCEO=20V ●Pb?FreePackageMaybeAvailable.TheG?SuffixDenotesa Pb?FreeLeadFinish | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN |
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