首頁 >2SC2229-Y(C)>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
iscSiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=150V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat)=0.5V(Max)@IC=10mA APPLICATIONS ·Designedforpoweramplifier,highspeedswitchingand regulatedpowersupplyapplications. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscSiliconNPNPowTransistor DESCRIPTION ?Highbreakdownvoltage ?Lowoutputcapacitance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Highvoltageswitchingapplications ?Driverstageaudioamplifierapplications ?BlackandwhiteTV | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
50mA,200VNPNPlasticEncapsulatedTransistor FEATURES ?HighBreakdownVoltage ?HighTransitionFrequency | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
TO-92MODPlastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●HighBreakdownVoltage ●HighTransitionFrequency | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | JIANGSU | ||
SiliconNPNtransistorinaTO-92LMPlasticPackage Descriptions SiliconNPNtransistorinaTO-92LMPlasticPackage. Features Highbreakdownvoltage,lowoutputcapacitance,highfT. Applications TVvideooutput,highvoltageswitchinganddriverstageofaudioamplifierapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍箭電子佛山市藍箭電子股份有限公司 | FOSHAN | ||
TRANSISTOR(NPN) FEATURE Powerdissipation PCM:0.8W(Tamb=25℃) Collectorcurrent ICM:0.05A Collector-basevoltage V(BR)CBO:200V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳實業(yè)深圳市永而佳實業(yè)有限公司 | WINNERJOIN | ||
SiliconNPNTripleDiffusedType(PCTProcess) | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
TRANSISTOR(BLACKANDWHITETVVIDEOOUTPUT,HIGHVOLTAHESWITCHING,DRIVERSTAGEAUDIOAMPLIFIERAPPLICATIONS) BlackandWhiteTVVideoOutputApplications High-VoltageSwitchingApplications DriverStageAudioAmplifierApplications ?Highbreakdownvoltage:VCEO=150V(min) ?Lowoutputcapacitance:Cob=5.0pF(max) ?Hightransitionfrequency:fT=120MHz(typ.) | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA |
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