首頁 >2SC2655-Y(C,M)>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
PowerAmplifierApplicationsPowerSwitchingApplications PowerAmplifierApplications PowerSwitchingApplications ?Lowsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) ?Highcollectorpowerdissipation:PC=900mW ?High-speedswitching:tstg=1.0μs(typ.) ?Complementaryto2SA1020. | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
TRANSISTOR(NPN) FEATURES Powerdissipation PCM:900mW(Tamb=25℃) Collectorcurrent ICM:2A Collector-basevoltage V(BR)CBO:50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳實業(yè)深圳市永而佳實業(yè)有限公司 | WINNERJOIN | ||
SiliconNPNtransistorinaTO-92LMPlasticPackage Descriptions SiliconNPNtransistorinaTO-92LMPlasticPackage. Features Lowsaturationvoltage,highspeedswitchingtime,complementaryto2SA1020. Applications Poweramplifierandswitchingapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司 | FOSHAN | ||
TRANSISTOR(NPN) FEATURES ●Lowsaturationvoltage:VCE(sat)=0.5V(Max)(IC=1A) ●Highspeedswitchingtime:tstg=1μs(Typ.) ●Complementaryto2SA1020 | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. | KOOCHIN | ||
POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
iscSiliconNPNPowTransistor DESCRIPTION ?SiliconNPNepitaxialtype ?Lowsaturationvoltage ?Complementaryto2SA1020 ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Poweramplifierapplications ?Powerswitchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
TO-92LPlastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●LowSaturationVoltage:VCE(sat)=0.5V(Max)(IC=1A) ●HighSpeedSwitchingTime:tstg=1μs(Typ.) ●Complementaryto2SA1020 | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | JIANGSU | ||
NPNPlasticEncapsulatedTransistor FEATURES -Lowsaturationvoltage：VCE(sat)=0.5V(Max)(IC=1A) -Highspeedswitchingtime：tstg=1μs(Typ.) -Complementaryto2SA1020 | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
NPNGeneralPurposeTransistors NPNGeneralPurposeTransistors P/bLead(Pb)-Free | WEITRON Weitron Technology | WEITRON |
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