首頁 >2SC2712-Y,LF(T>規(guī)格書列表
| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SiliconEpitaxialPlanarTransistor | BILINGalaxy Semi-Conductor Holdings Limited 銀河微電常州銀河世紀(jì)微電子股份有限公司 | BILIN | ||
SiliconNPNtransistorinaSOT-23PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司 | FOSHAN | ||
iscSiliconNPNPowerTransistor DESCRIPTION ?WithSOT-23packaging ?Highcollector-basevoltage ?Highpowerdissipation ?Lowsaturationvoltage ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ?Poweramplifierapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
SiliconEpitaxialPlanarTransistor | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 魯光電子深圳市魯光電子科技有限公司 | LUGUANG | ||
NPNEPITAXIALSILICONTRANSISTOR PRF-AMPLIFIER,LOWLEVEL&LOWNOISE ●Complemento2SA1037 ●Collector-current:Ic=100mA ●Collector-EmillerVoltage:VCE=45V ●HighTotalpowerDissipationPc=225mW ●HighlifeAndGoodLinearity | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司 | WINNERJOIN | ||
Plastic-EncapsulateTransistors FEATURES LowNoise:NF=1dB(Typ),10dB(MAX) Complementaryto2SA1162 | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰電子有限公司 | HOTTECH | ||
SOT-23Plastic-EncapsulateTransistors TRANSISTOR(NPN) Features ●AudioFrequencyGeneralPurposeAmplifierApplications ●LowNoise:NF=1dB(Typ),10dB(MAX) ●Complementaryto2SA1162 | HDSEMIJiangsu High diode Semiconductor Co., Ltd 蘇海德半導(dǎo)體蘇海德半導(dǎo)體有限公司 | HDSEMI | ||
SOT-23Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURE ?LowNoise:NF=1dB(Typ),10dB(MAX) ?Complementaryto2SA1162 ?AudioFrequencyGeneralPurposeAmplifierApplications | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司 | JIANGSU | ||
Plastic-EncapsulateTransistors | SHENZHENSLSSHENZHEN SLS TECHNOLOGY CO.,LTD. 三聯(lián)盛科技股份深圳市三聯(lián)盛科技股份有限公司 | SHENZHENSLS | ||
SOT-23BIPOLARTRANSISTORSTRANSISTOR(PNP) | RECTRON Rectron Semiconductor | RECTRON |
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