首頁 >2SC3279-M(F>規(guī)格書列表
| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
TRANSISTOR(NPN) | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司 | WINNERJOIN | ||
NPNPlasticEncapsulatedTransistor | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
NPNTransistorPlastic-EncapsulateTransistors FEATURES HighDCcurrentgainandexcellenthFElinearity. Lowsaturationvoltage. | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
SiliconNPNEpitaxialType(PCTprocess)StrobeFlashApplications | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
NPNEPITAXIALTYPE(STOROBOFLASH,MEDIUMPOWERAMPLIFIERAPPLICATIONS) StrobeFlashApplications MediumPowerAmplifierApplications ?HighDCcurrentgainandexcellenthFElinearity :hFE(1)=140~600(VCE=1V,IC=0.5A) :hFE(2)=70(min),200(typ.)(VCE=1V,IC=2A) ?Lowsaturationvoltage:VCE(sat)=0.5V(max) (IC=2A,IB=50 | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
TRANSISTOR(NPN) | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. | KOOCHIN | ||
TO-92Plastic-EncapsulateTransistors | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | JIANGSU | ||
NPNSiliconEpitaxialTransistors | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
NPNSiliconEpitaxialTransistors Features ?HighDCCurrentGainandexcellenthFELinearity hFE(1)=140-600(VCE=1.0V,IC=0.5A) hFE(2)=70(Min.),200(Typ.)(VCE=1.0V,IC=2.0A) ?LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?LeadFreeFinish/RoHSCompliant | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
NPNSiliconEpitaxialTransistors Features ?HighDCCurrentGainandexcellenthFELinearity hFE(1)=140-600(VCE=1.0V,IC=0.5A) hFE(2)=70(Min.),200(Typ.)(VCE=1.0V,IC=2.0A) ?LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?LeadFreeFinish/RoHSCompliant | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC |
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