首頁 >2SC3326-BLF(T>規(guī)格書列表
| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SiliconNPNtransistorinaSOT-23PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司 | FOSHAN | ||
SiliconNPNEpitaxialType(PCTprocess)ForMutingandSwitchingApplications | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
NPNEPITAXIALTYPE(FORMUTINGANDSWITCHINGAPPLICATIONS) ForMutingandSwitchingApplications ?Highemitter-basevoltage:VEBO=25V(min) ?HighreversehFE:ReversehFE=150(typ.)(VCE=?2V,IC=?4mA) ?Lowonresistance:RON=1?(typ.)(IB=5mA) ?HighDCcurrentgain:hFE=200~1200 ?Smallpackage | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
SiliconNPNEpitaxial Features ●Highemitter-basevoltage:VEBO=25V(min). ●HighreversehFE:ReversehFE=150(typ.)(VCE=-2V,IC=-4mA). ●Lowonresistance:RON=1Ω(typ.)(IB=5mA). ●HighDCcurrentgain:hFE=200~1200. ●Smallpackage. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
TOSHIBATransistorSiliconNPNEpitaxialType(PCTprocess) ForMutingandSwitchingApplications ?AEC-Q101Qualified(Note1). ?Highemitter-basevoltage:VEBO=25V ?HighreversehFE:ReversehFE=150(typ.)(VCE=?2V,IC=?4mA) ?Lowonresistance:RON=1Ω(typ.)(IB=5mA) ?HighDCcurrentgain:hFE=200to1200 ?Smallpackage | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
ForMutingandSwitchingApplications ForMutingandSwitchingApplications ?Highemitter-basevoltage:VEBO=25V(min) ?HighreversehFE:ReversehFE=150(typ.)(VCE=?2V,IC=?4mA) ?Lowonresistance:RON=1?(typ.)(IB=5mA) ?HighDCcurrentgain:hFE=200~1200 ?Smallpackage | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
ForMutingandSwitchingApplications ForMutingandSwitchingApplications ?Highemitter-basevoltage:VEBO=25V(min) ?HighreversehFE:ReversehFE=150(typ.)(VCE=?2V,IC=?4mA) ?Lowonresistance:RON=1?(typ.)(IB=5mA) ?HighDCcurrentgain:hFE=200~1200 ?Smallpackage | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
ForMutingandSwitchingApplications ForMutingandSwitchingApplications ?Highemitter-basevoltage:VEBO=25V(min) ?HighreversehFE:ReversehFE=150(typ.)(VCE=?2V,IC=?4mA) ?Lowonresistance:RON=1?(typ.)(IB=5mA) ?HighDCcurrentgain:hFE=200~1200 ?Smallpackage | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
TOSHIBATransistorSiliconNPNEpitaxialType(PCTprocess) ForMutingandSwitchingApplications ?AEC-Q101Qualified(Note1). ?Highemitter-basevoltage:VEBO=25V ?HighreversehFE:ReversehFE=150(typ.)(VCE=?2V,IC=?4mA) ?Lowonresistance:RON=1Ω(typ.)(IB=5mA) ?HighDCcurrentgain:hFE=200to1200 ?Smallpackage | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
ForMutingandSwitchingApplications ForMutingandSwitchingApplications ?Highemitter-basevoltage:VEBO=25V(min) ?HighreversehFE:ReversehFE=150(typ.)(VCE=?2V,IC=?4mA) ?Lowonresistance:RON=1?(typ.)(IB=5mA) ?HighDCcurrentgain:hFE=200~1200 ?Smallpackage | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA |
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