首頁(yè) >2SC4213(AAAB)>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
ForMutingandSwitchingApplications | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
ForMutingandSwitchingApplications | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
SiliconNPNEpitaxial Features ●Highemitter-basevoltage:VEBO=25V(min). ●HighreversehFE:ReversehFE=150(typ.)(VCE=-2V,IC=-4mA). ●Lowonresistance:RON=1ù(typ.)(IB=5mA). ●HighDCcurrentgain:hFE=2001200. ●Smallpackage. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
SiliconNPNEpitaxialType(PCTprocess)ForMutingandSwitchingApplications | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
NPNEPITAXIALTYPE(FORMUTINGANDSWITCHIGAPPLICATIONS) ForMutingandSwitchingApplications ?Highemitter-basevoltage:VEBO=25V(min) ?HighreversehFE:ReversehFE=150(typ.)(VCE=?2V,IC=?4mA) ?Lowonresistance:RON=1?(typ.)(IB=5mA) ?HighDCcurrentgain:hFE=200~1200 ?Smallpackage | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
ForMutingandSwitchingApplications | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
ForMutingandSwitchingApplications | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|
