首頁 >2SC5356(Q)>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
iscSiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=800V(Min.) ·LowCollectorSaturationVoltage :VCE(sat)=1.0V(Max.)@IC=1.2A ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforlowfrequencypoweramplifierapplicati | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
SiliconNPNTripleDiffusedType | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
NPNTRIPLEDIFFUSEDTYPE(SWITCHINGREGULATOR,HIGHVOLTAGESWITCHING,DC-DCCONVERTERAPPLICATIONS) HighVoltageSwitchingApplications SwitchingRegulatorApplications DC-DCConverterApplications ?Excellentswitchingtimes:tf=0.5μs(max)(IC=1.2A) ?Highcollectorsbreakdownvoltage:VCEO=800V ?HighDCcurrentgain:hFE=15(min)(IC=0.15A) | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA |
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