首頁 >2SD1436,B1032>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SiliconNPNTripleDiffused SiliconNPNTripleDiffused Application Powerswitchingcomplementarypairwith2SB1032(K) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscSiliconNPNDarlingtonPowerTransistor SiliconNPNDarlingtonPowerTransistor DESCRIPTION ·HighDCCurrentGain :hFE=1000(Min.)@IC=5A,VCE=3V ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=120V(Min) ·ComplementtoType2SB1032 APPLICATIONS ·Designedforpowerswitchingapplications. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
SiliconNPNTripleDiffused SiliconNPNTripleDiffused Application Powerswitchingcomplementarypairwith2SB1032(K) | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconNPNTripleDiffused SiliconNPNTripleDiffused Application Powerswitchingcomplementarypairwith2SB1032(K) | HitachiHitachi Semiconductor 日立日立公司 | Hitachi |
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