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2SD2206

MicroMotorDrive,HammerDriveApplications

MicroMotorDrive,HammerDriveApplications SwitchingApplications PowerAmplifierApplications ?HighDCcurrentgain:hFE=2000(min)(VCE=2V,IC=1A) ?Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=1A,IB=1mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SD2206

MicroMotorDrive,HammerDriveApplications

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SD2206

SiliconNPNEpitaxialType(DarlingtonPowerTransistor)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SD2206

NPNEPITAXIALTYPE(MICROMOTORDRIVE,HAMMERDRIVE,SWITCHING,POWERAMPLIFIERAPPLICATIONS)

MicroMotorDrive,HammerDriveApplications SwitchingApplications PowerAmplifierApplications ?HighDCcurrentgain:hFE=2000(min)(VCE=2V,IC=1A) ?Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=1A,IB=1mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SD2206A

MicroMotorDrive,HammerDriveApplications

MicroMotorDrive,HammerDriveApplications SwitchingApplications PowerAmplifierApplications ?HighDCcurrentgain:hFE=2000(min)(VCE=2V,IC=1A) ?Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=1A,IB=1mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

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