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2SJ552STL-E

Silicon P Channel MOS FET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ552

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ552

SiliconPChannelMOSFETHighSpeedPowerSwitching

SiliconPChannelMOSFET HighSpeedPowerSwitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

HitachiHitachi Semiconductor

日立日立公司

2SJ552(L)_15

SiliconPChannelMOSFET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ552L

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-20A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.055Ω(MAX)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SJ552L

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ552L

SiliconPChannelMOSFETHighSpeedPowerSwitching

SiliconPChannelMOSFET HighSpeedPowerSwitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

HitachiHitachi Semiconductor

日立日立公司

2SJ552L-E

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ552S

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ552S

SiliconPChannelMOSFETHighSpeedPowerSwitching

SiliconPChannelMOSFET HighSpeedPowerSwitching Features ?Lowon-resistance RDS(on)=0.042?typ. ?Lowdrivecurrent. ?4Vgatedrivedevices. ?Highspeedswitching.

HitachiHitachi Semiconductor

日立日立公司

詳細參數(shù)

  • 型號：

    2SJ552STL-E

  • 制造商：

    RENESAS

  • 制造商全稱：

    Renesas Technology Corp

  • 功能描述：

    Silicon P Channel MOS FET

供應(yīng)商型號品牌批號封裝庫存備注價格
RENESAS/瑞薩
23+
TO263
5000
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳
 詢價
RENESAS/瑞薩
23+
TO263
6500
專注配單,只做原裝進口現(xiàn)貨
 詢價
RENESAS/瑞薩
23+
TO263
6500
專注配單,只做原裝進口現(xiàn)貨
 詢價
RENESAS/瑞薩
2450+
TO263
8850
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
 詢價
RENESAS瑞薩/HITACHI日立
24+
TO-262
6205
新進庫存/原裝
 詢價
RENESAS
24+
SOT263
5000
只做原裝公司現(xiàn)貨
 詢價
NEXPERIA/安世
23+
SOT-23
69820
終端可以免費供樣,支持BOM配單!
 詢價
HITACHI
1922+
SOT-262
35689
原裝進口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨
 詢價
日立
22+
6000
220
十年配單,只做原裝
 詢價
RENESAS/瑞薩
07+
TO-263
6000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
更多2SJ552STL-E供應(yīng)商 更新時間2025-7-27 11:10:00

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