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PBSS303NX

Marking：5D；Package：SC-62；30 V, 5.1 A NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTA144WE

Marking：5D；Package：SC-75；PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PEMB15

Marking：5D；Package：SOT666；PNP/PNP resistor-equipped transistors; R1 = 4.7 k?, R2 = 4.7 k?

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PMBD914

Marking：5D；Package：SOT23；High-speed switching diode

1.Generaldescription High-speedswitchingdiode,fabricatedinplanartechnology,andencapsulatedinasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Highswitchingspeed:trr≤4ns ?Lowcapacitance:Cd≤1.5pF ?Lowleakagecurrent ?

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PMBD914-Q

Marking：5D；Package：SOT23；High-speed switching diode

1.Generaldescription High-speedswitchingdiode,fabricatedinplanartechnology,andencapsulatedinasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Highswitchingspeed:trr≤4ns ?Lowcapacitance:Cd≤1.5pF ?Lowleakagecurrent ?

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PMPB14XN

Marking：5D；Package：SOT1220；40 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessmediumpower DFN2020MD-6(SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits ?Veryfastswitching ?Lowthresholdvoltage ?TrenchMOSFE

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

1SS193

Marking：5D；Package：SOT-23；Silicon Epitaxial Planar Switching Diode

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半導(dǎo)體東莞市平晶半導(dǎo)體科技有限公司

1SS355

Marking：5D；Package：SOD-323；Silicon Epitaxial Planar Diode

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

AU0551D5

Marking：5D；Package：SOD-523；1-Line Uni-directional TVS Diode

APMICROApplied Power Microelectronics Co.,Ltd.

應(yīng)能江蘇應(yīng)能微電子股份有限公司

BAS516

Marking：5D；Package：SOD-523；High Speed Switching Diode

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀(jì)微電子股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    5D

  • 制造商：

    Amphenol PCD

  • 功能描述：

    TBH120510 \ TERMINAL BLOCK - BOEING - Bulk

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CALEX
23+
模塊
130
全新原裝正品,量大可訂貨!可開(kāi)17%增值票!價(jià)格優(yōu)勢(shì)!
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TOSHIBA
24+/25+
1012
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24+
7598
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2017+
NA
28562
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FUJI
10+
主營(yíng)模塊
85
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TOS
23+
TO220
1563
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TOSHIBA
24+
TO-220NIS(Ce
9652
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ZovCNR
24+
DIP
6980
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ARC
13+
1677
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TOSHIBA
24+
TO-220F-2
5000
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更多5D供應(yīng)商 更新時(shí)間2025-7-5 16:31:00

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