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BUK6D22-30E

Marking:6A;Package:DFN2020MD-6;30 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inamediumpowerDFN2020MD-6 (SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?ExtendedtemperaturerangeTj=175°C ?Sidewettableflanksforo

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

DTA602

Marking:6A;Package:SC-89;Bias Resistor Transistors

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

FS

First Silicon Co., Ltd

LDTA114EET1G

Marking:6A;Package:SC-89;Bias Resistor Transistors

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

LDTA114EET1G

Marking:6A;Package:SC-89;Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

MM1Z43

Marking:6A;Silicon Planar Zener Diodes

FEATURES ?Totalpowerdissipation:Max.500mW. ?Widezenerreversevoltagerange2.0Vto75V. ?Smallplasticpackagesuitableforsurfacemounteddesign. ?Toleranceapproximately±5

JUXINGGuangdong Juxing Electronics Technology Co., Ltd.

廣東鉅興電子廣東鉅興電子科技有限公司

MM1Z43

Marking:6A;Package:SOD-123F;SILICON PLANAR ZENER DIODES

Features ?Totalpowerdissipation:max.500mW ?Smallplasticpackagesuitableforsurfacemounteddesign ?Toleranceapproximately±5

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導(dǎo)體先之科半導(dǎo)體科技(東莞)有限公司

NHUMB9

Marking:6A;Package:SOT363;80 V, 100 mA PNP/PNP resistor-equipped double transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Highbreakdownvoltage ?Built-inresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

NHUMB9

Marking:6A;Package:SC-88;80 V, 100 mA PNP/PNP resistor-equipped double transistors

1.Generaldescription PNP/PNPResistor-EquippeddoubleTransistor(RET)familyinaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackage. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEITA NPN/NPN complement: NPN/PNP complement: NHUMB102.247NHU

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

NHUMB9-Q

Marking:6A;Package:SOT363;80 V, 100 mA PNP/PNP resistor-equipped double transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Highbreakdownvoltage ?Built-inresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

NX138AKM

Marking:6A;Package:SOT883;60 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadless,ultrasmallDFN1006-3 (SOT883)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Logic-levelcompatible ?Veryfastswitching ?TrenchMOSFETt

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

詳細(xì)參數(shù)

  • 型號:

    6A

  • 制造商:

    Taiwan Semiconductor

  • 功能描述:

    Bulk

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SOT23-3
15000
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23+
NA
5000
公司只做原裝,可配單
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玻璃保險
24+
NA/
100
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
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玻璃保險管
24+
520
60000
全新原裝現(xiàn)貨
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Apex
1824+
NA
16
加我QQ或微信咨詢更多詳細(xì)信息,
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KEC
23+
1606+
6500
專注配單,只做原裝進口現(xiàn)貨
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KEC
23+
1606+
6500
專注配單,只做原裝進口現(xiàn)貨
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MOLEX
2022+
2719
全新原裝 貨期兩周
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Mot
24+
SOT-23
10000
鄭重承諾只做原裝進口現(xiàn)貨
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更多6A供應(yīng)商 更新時間2025-7-4 17:34:00