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LDTA114YET1G

Marking：6D；Package：SC-89；Bias Resistor Transistors

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

MM1Z56

Marking：6D；Silicon Planar Zener Diodes

FEATURES ?Totalpowerdissipation:Max.500mW. ?Widezenerreversevoltagerange2.0Vto75V. ?Smallplasticpackagesuitableforsurfacemounteddesign. ?Toleranceapproximately±5

JUXINGGuangdong Juxing Electronics Technology Co., Ltd.

廣東鉅興電子廣東鉅興電子科技有限公司

MM1Z56

Marking：6D；Package：SOD-123F；SILICON PLANAR ZENER DIODES

Features ?Totalpowerdissipation:max.500mW ?Smallplasticpackagesuitableforsurfacemounteddesign ?Toleranceapproximately±5

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導體先之科半導體科技（東莞）有限公司

MMBF5457

Marking：6D；Package：SOT-23；N-Channel General Purpose Amplifier

N-ChannelGeneralPurposeAmplifier Thisdeviceisalowlevelaudioamplifierandswitchingtransistors,andcanbeusedforanalogswitchingapplications.SourcedfromProcess55.

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

NHUMB13

Marking：6D；Package：SOT363；80 V, 100 mA PNP/PNP resistor-equipped double transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Highbreakdownvoltage ?Built-inresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

NHUMB13

Marking：6D；Package：SC-88；80 V, 100 mA PNP/PNP resistor-equipped double transistors

1.Generaldescription PNP/PNPResistor-EquippeddoubleTransistor(RET)familyinaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackage. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEITA NPN/NPN complement: NPN/PNP complement: NHUMB102.247NHU

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

NHUMB13-Q

Marking：6D；Package：SC-88；80 V, 100 mA PNP/PNP resistor-equipped double transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Highbreakdownvoltage ?Built-inresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS4021NX

Marking：6D；Package：SOT89；20 V, 7 A NPN low VCEsat (BISS) transistor

1.Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerand flatleadSOT89(SC-62)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS4021PX. 2.Featuresandbenefits ?Verylowcollector-emittersaturationvoltageVCEsat ?Hig

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PEMB19

Marking：6D；Package：SOT666；PNP/PNP resistor-equipped transistors; R1 = 22 kW, R2 = open

Features *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecost

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PESD2CANFD24V-QC

Marking：6D；Package：DFN1412D-3；ESD protection for In-vehicle networks

1.Generaldescription ESDprotectiondeviceinanultrasmallDFN1412D-3(SOT8009)leadlessSurface-MountedDevice (SMD)plasticpackagewithsidewettableflanksdesignedtoprotecttwoautomotiveIn-vehicle networkbuslinesfromthedamagecausedbyElectroStaticdischarge(ESD)andothert

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

詳細參數(shù)

  • 型號：

    6D

  • 制造商：

    Aeroflex/Inmet

  • 功能描述：

    ATTENUATOR - FIXED COAXIAL

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更多6D供應(yīng)商 更新時間2025-6-30 9:52:00

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