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FAN7005M

Marking：7005；Package：SOP-8；200mW Stereo Power Amplifier with Shutdown

Description TheFAN7005isadual,fullydifferentialaudiopoweramplifierdelivering200mW(typ.)ofcontinuouspowerintoan8?load.Whendriving200mWintoan8?loadfroma5Vpowersupply,theFAN7005haslessthan0.3ofTHD+Novertheentireaudiblefrequencyrange.Toreducethepowerco

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCX705

Marking：705；Package：SOT-89；120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR

DESCRIPTION ThisnewPNPDarlingtontransistorprovidesuserswithveryefficientperformancecombininglowVCE(sat)andveryhighHFEtogiveextremelylowonstatelossesat120Voperation.Thismakesitdealforuseinavarietyofefficientdrivingfunctionsincludingmotors,lampsrelaysand

Zetex

Zetex Semiconductors

IPA70R600P7S

Marking：70S600P7；Package：PG-TO220FullPAK；700V CoolMOS? P7 Power Transistor

700VCoolMOSP7PowerTransistor Potentialapplications ??RecommendedforFlybacktopologiesforexampleusedinChargers, ??Adapters,LightingApplications,etc.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA70R750P7S

Marking：70S750P7；Package：PG-TO220FullPAK；700V CoolMOS? P7 Power Transistor

700VCoolMOSP7PowerTransistor Potentialapplications ??RecommendedforFlybacktopologiesforexampleusedinChargers, ??Adapters,LightingApplications,etc.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD70R1K4CE

Marking：70S1K4CE；Package：PG-TO252；700V CoolMOS? CE Power Transistor

Features ?ExtremelylowlossesduetoverylowFOMRdson*QgandEoss ?Veryhighcommutationruggedness ?Easytouse/drive ?Pb-freeplating,Halogenfreemoldcompound ?Qualifiedforstandardgradeapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD70R1K4P7S

Marking：70S1K4P7；Package：PG-TO252-3；700V CoolMOS? P7 Power Transistor

Features ?ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss ?Excellentthermalbehavior ?IntegratedESDprotectiondiode ?Lowswitchinglosses(Eoss) ?Productvalidationacc.JEDECStandard Benefits ?Costcompetitivetechnology ?Lowertemperature ?HighESDruggedness ?Enablesefficiencygainsath

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD70R360P7S

Marking：70S360P7；Package：PG-TO252-3；700V CoolMOS? P7 Power Transistor

Features ?ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss ?Excellentthermalbehavior ?IntegratedESDprotectiondiode ?Lowswitchinglosses(Eoss) ?Productvalidationacc.JEDECStandard Benefits ?Costcompetitivetechnology ?Lowertemperature ?HighESDruggedness ?Enablesefficiencygainsath

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD70R600P7S

Marking：70S600P7；Package：PG-TO252-3；700V CoolMOS? P7 Power Transistor

Features ?ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss ?Excellentthermalbehavior ?IntegratedESDprotectiondiode ?Lowswitchinglosses(Eoss) ?Productvalidationacc.JEDECStandard Benefits ?Costcompetitivetechnology ?Lowertemperature ?HighESDruggedness ?Enablesefficiencygainsath

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD70R900P7S

Marking：70S900P7；Package：PG-TO252-3；700V CoolMOS? P7 Power Transistor

Features ?ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss ?Excellentthermalbehavior ?IntegratedESDprotectiondiode ?Lowswitchinglosses(Eoss) ?Productvalidationacc.JEDECStandard Benefits ?Costcompetitivetechnology ?Lowertemperature ?HighESDruggedness ?Enablesefficiencygainsath

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD70R950CE

Marking：70S950CE；Package：PG-TO252；700V CoolMOS? CE Power Transistor

Features ?ExtremelylowlossesduetoverylowFOMRdson*QgandEoss ?Veryhighcommutationruggedness ?Easytouse/drive ?Pb-freeplating,Halogenfreemoldcompound ?Qualifiedforstandardgradeapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    70

  • 制造商：

    Keystone Electronics

  • 類別：

    電池產(chǎn)品 > 電池座，電池夾，電池觸頭

  • 包裝：

    散裝

  • 樣式：

    固定夾（無觸點(diǎn)）

  • 電池?cái)?shù)：

    2

  • 安裝類型：

    底座安裝

  • 描述：

    BATTERY HOLDER CLIP 2 CELL

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