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FAN7005M

Marking:7005;Package:SOP-8;200mW Stereo Power Amplifier with Shutdown

Description TheFAN7005isadual,fullydifferentialaudiopoweramplifierdelivering200mW(typ.)ofcontinuouspowerintoan8?load.Whendriving200mWintoan8?loadfroma5Vpowersupply,theFAN7005haslessthan0.3ofTHD+Novertheentireaudiblefrequencyrange.Toreducethepowerco

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCX705

Marking:705;Package:SOT-89;120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR

DESCRIPTION ThisnewPNPDarlingtontransistorprovidesuserswithveryefficientperformancecombininglowVCE(sat)andveryhighHFEtogiveextremelylowonstatelossesat120Voperation.Thismakesitdealforuseinavarietyofefficientdrivingfunctionsincludingmotors,lampsrelaysand

Zetex

Zetex Semiconductors

IPA70R600P7S

Marking:70S600P7;Package:PG-TO220FullPAK;700V CoolMOS? P7 Power Transistor

700VCoolMOSP7PowerTransistor Potentialapplications ??RecommendedforFlybacktopologiesforexampleusedinChargers, ??Adapters,LightingApplications,etc.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA70R750P7S

Marking:70S750P7;Package:PG-TO220FullPAK;700V CoolMOS? P7 Power Transistor

700VCoolMOSP7PowerTransistor Potentialapplications ??RecommendedforFlybacktopologiesforexampleusedinChargers, ??Adapters,LightingApplications,etc.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD70R1K4CE

Marking:70S1K4CE;Package:PG-TO252;700V CoolMOS? CE Power Transistor

Features ?ExtremelylowlossesduetoverylowFOMRdson*QgandEoss ?Veryhighcommutationruggedness ?Easytouse/drive ?Pb-freeplating,Halogenfreemoldcompound ?Qualifiedforstandardgradeapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD70R1K4P7S

Marking:70S1K4P7;Package:PG-TO252-3;700V CoolMOS? P7 Power Transistor

Features ?ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss ?Excellentthermalbehavior ?IntegratedESDprotectiondiode ?Lowswitchinglosses(Eoss) ?Productvalidationacc.JEDECStandard Benefits ?Costcompetitivetechnology ?Lowertemperature ?HighESDruggedness ?Enablesefficiencygainsath

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD70R360P7S

Marking:70S360P7;Package:PG-TO252-3;700V CoolMOS? P7 Power Transistor

Features ?ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss ?Excellentthermalbehavior ?IntegratedESDprotectiondiode ?Lowswitchinglosses(Eoss) ?Productvalidationacc.JEDECStandard Benefits ?Costcompetitivetechnology ?Lowertemperature ?HighESDruggedness ?Enablesefficiencygainsath

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD70R600P7S

Marking:70S600P7;Package:PG-TO252-3;700V CoolMOS? P7 Power Transistor

Features ?ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss ?Excellentthermalbehavior ?IntegratedESDprotectiondiode ?Lowswitchinglosses(Eoss) ?Productvalidationacc.JEDECStandard Benefits ?Costcompetitivetechnology ?Lowertemperature ?HighESDruggedness ?Enablesefficiencygainsath

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD70R900P7S

Marking:70S900P7;Package:PG-TO252-3;700V CoolMOS? P7 Power Transistor

Features ?ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss ?Excellentthermalbehavior ?IntegratedESDprotectiondiode ?Lowswitchinglosses(Eoss) ?Productvalidationacc.JEDECStandard Benefits ?Costcompetitivetechnology ?Lowertemperature ?HighESDruggedness ?Enablesefficiencygainsath

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD70R950CE

Marking:70S950CE;Package:PG-TO252;700V CoolMOS? CE Power Transistor

Features ?ExtremelylowlossesduetoverylowFOMRdson*QgandEoss ?Veryhighcommutationruggedness ?Easytouse/drive ?Pb-freeplating,Halogenfreemoldcompound ?Qualifiedforstandardgradeapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    70

  • 制造商:

    Keystone Electronics

  • 類別:

    電池產(chǎn)品 > 電池座,電池夾,電池觸頭

  • 包裝:

    散裝

  • 樣式:

    固定夾(無觸點(diǎn))

  • 電池?cái)?shù):

    2

  • 安裝類型:

    底座安裝

  • 描述:

    BATTERY HOLDER CLIP 2 CELL

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更多70供應(yīng)商 更新時(shí)間2025-7-10 9:50:00