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RMD7N40DN

Marking：7N40；Package：DFN3X3；Dual N-Channel PowerTrench MOSFET

Features MaxrDS(on)=20mΩatVGS=10V,ID=7A MaxrDS(on)=27mΩatVGS=4.5V,ID=6A LowInductancePackagingShortensRise/FallTimes LowerSwitchingLosses 100%RgTested TerminationisLead-freeandRoHSCompliant

RECTRON

Rectron Semiconductor

RMP7N600LD

Marking：7N600；Package：TO-252-2L；N-Channel Power MOSFET

Features 600V,7A,RDS(ON)(Max.)=1.3Ω@VGS=10V. LowCrss FastSwitching 100%AvalancheTested

RECTRON

Rectron Semiconductor

RMP7N80T2

Marking：7N80；Package：TO-220；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES ?LowCrss ?Lowgatecharge ?Fastswitching ?ImprovedESDcapability ?Improveddv/dtcapability ?100%avalancheenergytest

RECTRON

Rectron Semiconductor

RMP7N80TI

Marking：7N80；Package：TO-220F；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES ?LowCrss ?Lowgatecharge ?Fastswitching ?ImprovedESDcapability ?Improveddv/dtcapability ?100%avalancheenergytest

RECTRON

Rectron Semiconductor

STD7N60M6

Marking：7N60M6；Package：DPAK；N-channel 600 V, 780 mΩ typ., 5 A, MDmesh M6 Power MOSFET in a DPAK package

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Applications ?Switchingapplications ?LLCconverters ?BoostPFCconverters Description ThenewMDmeshM6technologyincorporate

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STP7N65M2

Marking：7N65M2；Package：TO-220；N-channel 650 V, 0.98 廓 typ., 5 A MDmesh??M2 Power MOSFETs in TO-220 and IPAK packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingtheMDmesh?M2technology.Thankstothestriplayoutassociatedwithanimprovedverticalstructure,thedeviceexhibitsbothlowon-resistanceandoptimizedswitchingcharacteristics.Itisthereforesuitableforthemostdem

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STU7N65M2

Marking：7N65M2；Package：IPAK；N-channel 650 V, 0.98 廓 typ., 5 A MDmesh??M2 Power MOSFETs in TO-220 and IPAK packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingtheMDmesh?M2technology.Thankstothestriplayoutassociatedwithanimprovedverticalstructure,thedeviceexhibitsbothlowon-resistanceandoptimizedswitchingcharacteristics.Itisthereforesuitableforthemostdem

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

SVF7N65RDTR

Marking：7N65RD；Package：TO-252-2L；7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RDTR

Marking：7N65RD；Package：TO-252-2L；7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RDTR

Marking：7N65RD；Package：TO-252-2L；7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

詳細參數(shù)

  • 型號：

    7N

  • 制造商：

    UTC-IC

  • 制造商全稱：

    UTC-IC

  • 功能描述：

    7A, 100V N-CHANNEL POWER MOSFET

供應商型號品牌批號封裝庫存備注價格
LITEON/光寶
23+
TQFP
15000
全新原裝現(xiàn)貨,價格優(yōu)勢
 詢價
MPS/美國芯源
22+
QFN
25000
只做原裝,原裝,假一罰十
 詢價
ALIENTEK(星翼電子)
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
 詢價
Switchcraft
2022+
90
全新原裝 貨期兩周
 詢價
SWITCHCRAFT
20+
連接器
493
就找我吧!--邀您體驗愉快問購元件!
 詢價
FREESCALE
23+
TSSOP-16
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
FREESCALE
24+
NA/
3430
原裝現(xiàn)貨,當天可交貨,原型號開票
 詢價
FREESCALE
24+
TSSOP-16
60000
全新原裝現(xiàn)貨
 詢價
HP
23+
24000
現(xiàn)貨庫存
 詢價
KEYSTONEELECTRONICS
24+
NA
27200
原裝現(xiàn)貨,專業(yè)配單專家
 詢價
更多7N供應商 更新時間2025-7-7 16:39:00

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