ADG858

采用微型LFCSP封裝的0.58 Ω CMOS、1.8 V至5.5 V四通道SPDT/2:1多路復(fù)用器; ? 典型導(dǎo)通電阻：0.58 Ω \n\n? 最大導(dǎo)通電阻(85°C)：0.82 Ω \n\n? 單電源電壓：1.8 V至5.5 V \n\n? 高載流能力：250 mA連續(xù) \n\n? 軌到軌開關(guān)工作 \n\n? 快速開關(guān)時(shí)間：<20 ns \n\n? 典型功耗：<0.1 μW \n\n? 2.1 mm × 2.1微型LFCSP封裝;

ADG858是一款低壓CMOS器件，內(nèi)置四個(gè)單刀雙擲(SPDT)開關(guān)。在整個(gè)溫度范圍內(nèi)，該器件具有小于0.82 ?的超低導(dǎo)通電阻。額定電源電壓為4.2 V至5.5 V和2.7 V至3.6 V。\n\n 當(dāng)接通時(shí)，各開關(guān)在兩個(gè)方向的導(dǎo)電性能相同，輸入信號(hào)范圍可擴(kuò)展至電源電壓范圍。ADG858為先開后合式開關(guān)。\n\n 該器件采用2.1 mm×2.1 mm、16引腳微型LFCSP封裝，使其成為空間受限應(yīng)用的理想選擇，如手機(jī)、PDA和MP3。\n\n 產(chǎn)品聚焦\n\n 在整個(gè)工作溫度范圍（-40°C至+85℃）內(nèi)，導(dǎo)通電阻小于0.82 Ω。 1.8 V至5.5 V單電源供電。 與1.8 V CMOS邏輯兼容。 電流處理能力：每通道250 mA連續(xù)電流。 低總諧波失真加噪聲：0.06%（典型值）。 2.1 mm × 2.1 mm、16引腳小型LFCSP封裝。

ADG858

0.58 廓 CMOS, 2.3 V to 5.5 V, Quad SPDT/2:1 Mux in Mini LFCSP

GENERALDESCRIPTION TheADG858isalowvoltageCMOSdevicecontainingfoursingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.82Ωoverthefulltemperaturerange.TheADG858isfullyspecifiedfor4.2Vto5.5Vand2.7Vto3.6Vsupplyoperatio

ADG858BCPZ-REEL1

0.58 廓 CMOS, 2.3 V to 5.5 V, Quad SPDT/2:1 Mux in Mini LFCSP

GENERALDESCRIPTION TheADG858isalowvoltageCMOSdevicecontainingfoursingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.82Ωoverthefulltemperaturerange.TheADG858isfullyspecifiedfor4.2Vto5.5Vand2.7Vto3.6Vsupplyoperatio

ADG858BCPZ-REEL71

0.58 廓 CMOS, 2.3 V to 5.5 V, Quad SPDT/2:1 Mux in Mini LFCSP

GENERALDESCRIPTION TheADG858isalowvoltageCMOSdevicecontainingfoursingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.82Ωoverthefulltemperaturerange.TheADG858isfullyspecifiedfor4.2Vto5.5Vand2.7Vto3.6Vsupplyoperatio

ADS858xS

16-Bit,200-kSPS,8-,6-and4-Channel,Simultaneous-SamplingADCswithBipolarInputsonaSingleSupply

BC858

SmallSignalTransistors(PNP)

FEATURES ◆PNPSiliconEpitaxialPlanarTransistorsforswitchingandAFamplifierapplications. ◆Especiallysuitedforautomaticinsertioninthick-andthin-filmcircuits. ◆ThesetransistorsaresubdividedintothreegroupsA,BandCaccordingtotheircurrentgain.ThetypeBC856isavail

BC858

SwitchingandAmplifierApplications

Features ?SwitchingandAmplifierApplications ?Suitableforautomaticinsertioninthickandthin-filmcircuits ?LowNoise:BC859,BC860 ?ComplementtoBC846...BC850

BC858

EPITAXIALPLANARPNPTRANSISTOR(GENERALPURPOSE,SWITCHING)

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES ?ForComplementaryWithNPNTypeBC846/847/848.

BC858

PNPSiliconAFTransistors

PNPSiliconAFTransistors ?ForAFinputstagesanddriverapplications ?Highcurrentgain ?Lowcollector-emittersaturationvoltage ?Lownoisebetween30Hzand15kHz ?Complementarytypes:BC846,BC847,BC848,BC849,BC850(NPN)

BC858

PNPSiliconTransistor(GeneralpurposeapplicationSwitchingapplication)

Descriptions ?Generalpurposeapplication ?Switchingapplication Features ?Highvoltage:VCEO=-30V ?ComplementarypairwithBC848