ADRF5545A-EVALZ開(kāi)發(fā)板套件編程器的射頻評(píng)估開(kāi)發(fā)套件開(kāi)發(fā)板規(guī)格書(shū)PDF中文資料

ADRF5545A-EVALZ屬于開(kāi)發(fā)板套件編程器的射頻評(píng)估開(kāi)發(fā)套件開(kāi)發(fā)板。由亞德諾半導(dǎo)體技術(shù)有限公司制造生產(chǎn)的ADRF5545A-EVALZ射頻評(píng)估和開(kāi)發(fā)套件，開(kāi)發(fā)板本系列中的產(chǎn)品適用于在已知實(shí)施環(huán)境中，提供能訪問(wèn)射頻相關(guān)器件的功能或者有助于訪問(wèn)該功能。所含的焦點(diǎn)產(chǎn)品范圍從射頻信號(hào)鏈元器件（如放大器和檢測(cè)器）到模塊化收發(fā)器，以及不直接包含焦點(diǎn)產(chǎn)品的適配器硬件，但此類硬件可供方便地訪問(wèn)用戶單獨(dú)提供的特定射頻產(chǎn)品或系列。

FEATURES

Integrated dual-channel RF front end

2-stage LNA and high power SPDT switch

On-chip bias and matching

Single supply operation

Gain

High gain mode: 32 dB typical at 3.6 GHz

Low gain mode: 16 dB typical at 3.6 GHz

Low noise figure

High gain mode: 1.45 dB typical at 3.6 GHz

Low gain mode: 1.45 dB typical at 3.6 GHz

High isolation

RXOUT-CHA and RXOUT-CHB: 47 dB typical

TERM-CHA and TERM-CHB: 52 dB typical

Low insertion loss: 0.65 dB typical at 3.6 GHz

High power handling at TCASE = 105°C

Full lifetime

LTE average power (9 dB PAR): 40 dBm

Single event (<10 sec operation)

LTE average power (9 dB PAR): 43 dBm

High OIP3: 32 dBm typical

Power-down mode and low gain mode for LNA

Low supply current

High gain mode: 86 mA typical at 5 V

Low gain mode: 36 mA typical at 5 V

Power-down mode: 12 mA typical at 5 V

Positive logic control

6 mm × 6 mm, 40-lead LFCSP package

APPLICATIONS

Wireless infrastructure

TDD massive multiple input and multiple output and active antenna systems

TDD-based communication systems