首頁 >ALG2301>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
MOSFETP-CHANNELENHANCEMENTMODE DESCRIPTION TheAM2301istheP-Channellogicenhancementmodepowerfieldeffecttransistorisproducedusinghighcelldensity.advancedtrenchtechnologytoprovideexcellentRDS(ON)..lowgatechargeandoperationgateas2.5V. Thisdeviceissuitableforuseasaloadswitchorothergenera | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI | ||
MOSFET-20VP-CHANNELENHANCEMENTMODE DESCRIPTION TheAM2301AisavailableinSOT-23Spackage. FEATURES ?VDS=-20V ?RDS(ON),VGS@-4.5V,IDS@-4.7A=70mΩ ?RDS(ON),VGS@-2.5V,IDS@-1.0A=110mΩ ?AvailableinSOT-23SPackage APPLICATION ?Advancedtrenchprocesstechnology ?HighDensityCellDesignForUltraLowOn-Resistance | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI | ||
MOSFET-20VP-CHANNELENHANCEMENTMODE FEATURES SuperHighdensecelldesignforextremelylow RDS(ON)ReliableandRugged AvailableinSOT23package APPLICATIONS PowerManagement PortableEquipmentandBatteryPoweredSystems. | AITSEMIAiT Semiconductor Inc. 創(chuàng)瑞科技AiT創(chuàng)瑞科技 | AITSEMI | ||
P-Channel20-V(D-S)MOSFET | AnalogPower Analog Power | AnalogPower | ||
P-Channel20-V(D-S)MOSFET TheseminiaturesurfacemountMOSFETsutilizeahighcelldensitytrenchprocesstoprovidelowrDS(on)andtoensureminimalpowerlossandheatdissipation.TypicalapplicationsareDC-DCconvertersandpowermanagementinportableandbattery-poweredproductssuchascomputers,printers,PCMCIA | AnalogPower Analog Power | AnalogPower | ||
Superhighdensitycelldesignfor | AMS Advanced Monolithic Systems | AMS | ||
Superhighdensitycelldesignforextremelylow | AMS Advanced Monolithic Systems | AMS | ||
P-Channel20-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI | ||
1.5ADDRTERMINATIONREGULATOR | BCDSEMIBCD Semiconductor Manufacturing Limited 新進半導體上海新進半導體制造有限公司 | BCDSEMI | ||
2.0ASINGLECHANNELCURRENT-LIMITEDPOWERSWITCH | DIODESDiodes Incorporated 美臺半導體 | DIODES |
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