首頁 >AOD417(UMW)>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
P-Channel40V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=-55A@TC=25℃ ·DrainSourceVoltage :VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=10mΩ(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
P-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOU417usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardproductAOU417isPb-free(meetsROHS&Sony259specifications).AOU417LisaGreenProductorde | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD | ||
P-Channel30-V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgTested APPLICATIONS ?LoadSwitch ?BatterySwitch | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=-18A@TC=25℃ ·DrainSourceVoltage :VDSS=-30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
P-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAOU417usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardproductAOU417isPb-free(meetsROHS&Sony259specifications).AOU417LisaGreenProductorde | AOSMDAlpha & Omega Semiconductors 萬國半導體美國萬國半導體 | AOSMD | ||
AVR?MicrocontrollerwithCoreIndependentPeripheralsandpicoPower?Technology | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | ||
UHFvariablecapacitancediode DESCRIPTION TheBB417isavariablecapacitancediode,fabricatedinplanartechnology,andencapsulatedinthehermeticallysealedleadedglassSOD68(DO-34)package. FEATURES ?Excellentlinearity ?HermeticallysealedleadedglassSOD68(DO-34)package ?C15:3pF;ratio:3.5. APPLICATION | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
NPNSILICONTRANSISTOR,EPITAXIALPLANAR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產(chǎn)品股份有限公司 | NJSEMI | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 |
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