首頁 >AOD425-VB>規(guī)格書列表
| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
P-Channel40V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=-55A@TC=25℃ ·DrainSourceVoltage :VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=10mΩ(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
200-4000MHzMMICAmplifier | ASB Advanced Semiconductor Business Inc. | ASB | ||
200~4000MHzMMICAmplifier | ASB Advanced Semiconductor Business Inc. | ASB | ||
IlluminatedPushbutton-22,25,28&30mm | CIT CIT Relay & Switch | CIT | ||
IlluminatedPushbutton-22,25,28&30mm | CIT CIT Relay & Switch | CIT | ||
APCBack-UPS,6Outlets,425VA,120V | SCHNEIDERSchneider Electric 施耐德施耐德電氣 | SCHNEIDER | ||
NPN25GHzwidebandtransistor DESCRIPTION NPNdoublepolysiliconwidebandtransistorwithburiedlayerforlowvoltageapplicationsinaplastic,4-pindual-emitterSOT343Rpackage. FEATURES ?Veryhighpowergain ?Lownoisefigure ?Hightransitionfrequency ?Emitteristhermallead ?Lowfeedbackcapacitance. APPLI | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
Microwave,lownoise,SiGeNPNHBT Microwave,lownoise,SiGeNPNHBT UHF25GHZ,lownoisetransistorwithSiGeHBTtechnique,highpowergain,lownoiseandlargedynamicrange.TheadoptionofsubminiatureSOT-343Rpackage,especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFbroadbandhigh | SKTECHNOLGYSHIKE Electronics 時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司 | SKTECHNOLGY | ||
NPNTransistors ■Features ●Veryhighpowergain ●Lownoisefigure ●25GHzwidebandtransistor ●Emitteristhermallead ●Lowfeedbackcapacitance. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN |
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