AP2310GN

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP2310GN

N-Channel 60-V (D-S) MOSFET

AP2310GN

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP2310GN-HF-3TR

AP2310GN-HF-3TR - 晶體管, MOSFET, N溝道, 3 A, 60 V, 0.07 ohm, 10 V, 1.55 V

The AP2310GN-HF-3TR from Advanced Power Electronics Corp is a surface mount, N channel enhancement mode power MOSFET in SOT-23 package. This MOSFET provide designers with best combination of low resistance, extremely efficient and cost effectiveness. The device is best suited for commercial and indu; ·Simple drive requirement\n·Drain to source voltage of 60V\n·Gate to source voltage of ±20V\n·Continuous drain current (Id) of 3A at Vgs 10V and 25°C\n·Power dissipation (pd) of 1.38W\n·Operating junction temperature range from -55°C to 150°C\n·Low on state resistance of 70mohm at Vgs 10V\n;

AP2310GN-HF

Simple Drive Requirement

AP2310GN-HF

Simple Drive Requirement, Small Package Outline, Surface Mount Device

AP2310GN-HF_14

Simple Drive Requirement

AP2310GN-HF_16

Simple Drive Requirement