AQZ102繼電器的固態(tài)繼電器規(guī)格書PDF中文資料

Slim type with high capacity up to 4A DC load type also available

FEATURES

1. Slim SIL4-pin package

(W) 3.5 ×(D) 21.0 ×(H) 12.5 mm

(W) .138 ×(D) .827 ×(H) .492 inch

The compact size of the 4-pin SIL package allows high density mounting.

2. Extremely low on-resistance

3. Control low-level signal

Power PhotoMOS feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion.

4. Low-level off state leakage current of max. 10 μA

5. High I/O isolation voltage of 2,500 V

6. Eliminates the need for a counter electromotive protection diode in the drive circuit on the input side

7. Eliminates the need for a power supply to drive the power MOSFET

8. No restriction on mounting direction

9. Low thermoelectromotive force

10. Neither noise nor arc at contact

11. Sockets are also available(PA1a-PS, PA1a-PS-H)

12. Can be installed on the RT-3 relay terminal (Power PhotoMOS type)

TYPICAL APPLICATIONS

? Traffic signals

? Measuring instruments

? Industrial machines