首頁(yè) >AS703X_EVALKIT_BT>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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GLASSPACKAGESTEPRECOVERYDIODE DESCRIPTION: TheASRD700SeriesofStepRecoveryDiodesareDesignedforGeneralPurposeVCOandSamplerApplications. FEATURESINCLUDE: ?TransitionTimeasLowas70pS ?HermeticGlassPackage | ASI Advanced Semiconductor | ASI | ||
GLASSPACKAGESTEPRECOVERYDIODE DESCRIPTION: TheASRD700SeriesofStepRecoveryDiodesareDesignedforGeneralPurposeVCOandSamplerApplications. FEATURESINCLUDE: ?TransitionTimeasLowas70pS ?HermeticGlassPackage | ASI Advanced Semiconductor | ASI | ||
GLASSPACKAGESTEPRECOVERYDIODE DESCRIPTION: TheASRD700SeriesofStepRecoveryDiodesareDesignedforGeneralPurposeVCOandSamplerApplications. FEATURESINCLUDE: ?TransitionTimeasLowas70pS ?HermeticGlassPackage | ASI Advanced Semiconductor | ASI | ||
XDSLSPLITTERFILTERMODULE | pulse Pulse A Technitrol Company | pulse | ||
BiasControlledMonolithicICVHF/UHFRFAmplifier Features ?BiasControlledMonolithicIC(NoexternalDCbiasingvoltageongate1.);Toreduceusingpartscost&PCboardspace. ?High|yfs|;|yfs|=29mStyp.(f=1kHz) ?Lownoise;NF=1.0dBtyp.(atf=200MHz),NF=1.8dBtyp.(atf=900MHz) ?WithstandingtoESD;Buildin | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
BiasControlledMonolithicICVHF/UHFRFAmplifier Features ?BiasControlledMonolithicIC(NoexternalDCbiasingvoltageongate1.);Toreduceusingpartscost&PCboardspace. ?High|yfs|;|yfs|=29mStyp.(f=1kHz) ?Lownoise;NF=1.0dBtyp.(atf=200MHz),NF=1.8dBtyp.(atf=900MHz) ?WithstandingtoESD;Buildin | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ●30V,40A,RDS(ON)=17mΩ@VGS=10V. RDS(ON)=30mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●Leadfreeproductisacquired. ???????●TO-220&TO-263package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,40A,RDS(ON)=19mΩ@VGS=10V. RDS(ON)=32mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ●30V,40A,RDS(ON)=17mΩ@VGS=10V. RDS(ON)=30mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●Leadfreeproductisacquired. ???????●TO-220&TO-263package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET |
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