首頁 >ASM9435D/TR-LF>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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P-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半導體有限公司 | DOINGTER | ||
P-ChannelEnhancementModePowerMOSFET | BellingSHANGHAI BELLING CO., LTD. 上海貝嶺上海貝嶺股份有限公司 | Belling | ||
P-ChannelEnhancementModeMOSFET | booklyBookly Micro electronic 百力微電子上海百力微電子股份有限公司 | bookly | ||
SiliconMonolithicintregratedcircuit | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
P-ChannelEnhancementModeMOSFET FEATURES ■-30V,-5.3A,RDS(ON)=50m?@VGS=-10V. ???????RDS(ON)=90m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-5A,RDS(ON)=60mW@VGS=-10V. RDS(ON)=95mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeMOSFET FEATURES ■-30V,-5.3A,RDS(ON)=50m?@VGS=-10V. ???????RDS(ON)=90m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeMOSFET
| CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-5.3A,RDS(ON)=60mW@VGS=-10V. RDS(ON)=120mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-223package. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor | CHENMKOCHENMKO ENTERPRISE CO., LTD. 力勤力勤股份有限公司 | CHENMKO |
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