AT28C64B

64K (8K x 8) CMOS E2PROM with Page Write and Software Data Protection

Description TheAT28C64Bisahigh-performanceelectrically-erasableandprogrammablereadonlymemory(EEPROM).Its64Kofmemoryisorganizedas8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto150nswithpowerdissipation

AT28C64B

5V 64Kbit (8Kbit x 8) Parallel EEPROM with Software Data Protection; 8 Kbits x 8 (64 Kbit)\n5V ±10% Supply\nParallel Interface\n150ns access time\nSelf-Timed Erase and Write Cycles (10 ms max)\nPage Write and Byte Write\nData Polling for end of write detection\nLow Power Consumption\nRead / Write current 40 mA (Max)\n Standby current TTL 2 mA (Max), CMOS 100 μA (Max) \n Hardware Protection \nSoftware Data Protect \nMore than 100,000 erase/write cycles\nData retention > 10 years\nTemperature Ranges\nStandard Temperature Range: -40°C to 85°C\nAvailable in Green (Pb/Halide-free) Packaging Only\n32-lead, Plastic J-leaded Chip Carrier (PLCC)\n28-lead, 0.600\" Wide, Plastic Dual Inline Package (PDIP)\n28-lead, 0.300\" Wide, Plastic Gull Wing Small Outline (SOIC)\n28-lead, Plastic Thin Small Outline Package (TSOP);

The Microchip AT28C64B is a high-performance64Kbit Parallel EEPROM offering access times to 150ns with power dissipation of220mW. Deselected, CMOS standby current is less than 100μA. Accessed likestatic RAM for the read or write cycle without external components, it containsa 64-byte page register to allow writing of up to 64 bytes simultaneously. Optional Software Data Protection mechanismguards against inadvertent writes; and an extra 64 bytes of EEPROM enablesdevice identification or tracking.

AT28C64B

64K (8K x 8) Parallel EEPROM with Page Write and Software Data Protection

AT28C64B

64K (8K x 8) Parallel EEPROM with Page Write and Software Data Protection

AT28C64B

64K (8K x 8) Parallel EEPROM with Page Write and Software Data Protection

AT28C64B-15

64K (8K x 8) CMOS E2PROM with Page Write and Software Data Protection

Description TheAT28C64Bisahigh-performanceelectrically-erasableandprogrammablereadonlymemory(EEPROM).Its64Kofmemoryisorganizedas8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto150nswithpowerdissipation

AT28C64B-15JC

64K (8K x 8) CMOS E2PROM with Page Write and Software Data Protection

Description TheAT28C64Bisahigh-performanceelectrically-erasableandprogrammablereadonlymemory(EEPROM).Its64Kofmemoryisorganizedas8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto150nswithpowerdissipation

AT28C64B-15JI

64K (8K x 8) CMOS E2PROM with Page Write and Software Data Protection

Description TheAT28C64Bisahigh-performanceelectrically-erasableandprogrammablereadonlymemory(EEPROM).Its64Kofmemoryisorganizedas8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto150nswithpowerdissipation

AT28C64B-15PC

64K (8K x 8) CMOS E2PROM with Page Write and Software Data Protection

Description TheAT28C64Bisahigh-performanceelectrically-erasableandprogrammablereadonlymemory(EEPROM).Its64Kofmemoryisorganizedas8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto150nswithpowerdissipation

AT28C64B-15PI

64K (8K x 8) CMOS E2PROM with Page Write and Software Data Protection

Description TheAT28C64Bisahigh-performanceelectrically-erasableandprogrammablereadonlymemory(EEPROM).Its64Kofmemoryisorganizedas8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto150nswithpowerdissipation