首頁 >AUIRFR4105>規(guī)格書列表
零件型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
AUIRFR4105 | Advanced Planar Technology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
AUIRFR4105 | Advanced Planar Technology AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET?PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesign | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
AUIRFR4105 | HEXFET? Power MOSFET; ● Advanced Planar Technology\n● Low On-Resistance\n● Dynamic dV/dT Rating\n● 175°C Operating Temperature\n● Fast Switching\n● Fully Avalanche Rated\n● Repetitive Avalanche Allowed up to Tjmax\n● Lead-Free, RoHS Compliant\n● Automotive Qualified *; AUTOMOTIVE GRADEDescription\nSpecifically designed for Automotive applications, this cellular design of HEXFET? Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
AUIRFR4105 | Advanced Planar Technology Low On-Resistance | IRF International Rectifier | IRF | |
HEXFET? Power MOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRF International Rectifier | IRF | ||
AUTOMOTIVE GRADE Description SpecificallydesignedforAutomotiveapplications,thiMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitive | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
AUTOMOTIVE GRADE Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HEXFET? Power MOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRF International Rectifier | IRF | ||
HEXFET? Power MOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRF International Rectifier | IRF | ||
AUTOMOTIVE GRADE Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
技術(shù)參數(shù)
- OPN:
AUIRFR4105Z
- Qualification:
Automotive
- Package name:
DPAK
- VDS max:
55 V
- RDS (on) @10V max:
24.5 m?
- ID @25°C max:
30 A
- QG typ @10V:
18 nC
- Polarity:
N
- VGS(th) min:
2 V
- VGS(th) max:
4 V
- Technology:
Gen 10.2
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
24+ |
TO-252 |
7793 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價(jià) | ||
Infineon |
24+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢供應(yīng) |
詢價(jià) | ||
IR |
23+ |
TO-252 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價(jià) | ||
IR |
18+ |
TO-252 |
41200 |
原裝正品,現(xiàn)貨特價(jià) |
詢價(jià) | ||
INFINEON |
1503+ |
TO-252 |
3000 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | ||
IR |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
Infineon Technologies |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
Infineon Technologies |
24+ |
原裝 |
5000 |
原裝正品,提供BOM配單服務(wù) |
詢價(jià) | ||
Infineon |
2022+ |
原廠原包裝 |
6800 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價(jià) |
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