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BAS40W-04

SCHOTTKYBARRIERDIODE

RECTRON

Rectron Semiconductor

BAS40W-04

SurfaceMountSchottkyBarrierDiode

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀(jì)微電子股份有限公司

BAS40W-04

SCHOTTKYBARRIERDIODE

FEATURES Powerdissipation PD:200mW(Tamb=25℃) Collectorcurrent IF:200mA Collector-basevoltage VR:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

BAS40W-04

SchottkyDiode

Features ◇LowForwardVoltage ◇FastSwitching

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

BAS40W-04

SurfaceMountSchottkyBarrierDiode

FEATURES ●LowForwardvoltagedrop. ●Fastswitching. ●Ultra-smallsurfacemountpackage. ●PNjunctionguardringfortransientandESDprotection. APPLICATIONS ●Forgeneralpurposeswitchingapplications.

DSK

Diode Semiconductor Korea

BAS40W-04

SCHOTTKYDIODE

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司

BAS40W-04

SurfaceMountSchottkyBarrierDiode

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀(jì)微電子股份有限公司

BAS40W-04

SURFACEMOUNTSCHOTTKYBARRIERDIODE

Features ?LowForwardVoltageDrop ?FastSwitching ?Ultra-SmallSurfaceMountPackage ?PNJunctionGuardRingforTransientandESDProtection ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3)

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

BAS40W-04

SCHOTTKYDIODE

FEATURES ●LowForwardVoltage ●FastSwitching

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金譽(yù)半導(dǎo)體深圳市金譽(yù)半導(dǎo)體股份有限公司

BAS40W-04

SurfaceMountSchottkyBarrierDiode

FEATURES ●LowForwardvoltagedrop. ●Fastswitching. ●Ultra-smallsurfacemountpackage. ●PNjunctionguardringfortransientandESDprotection. APPLICATIONS ●Forgeneralpurposeswitchingapplications.

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀(jì)微電子股份有限公司

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