首頁 >BC807-RTK/P>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
GeneralPurposeTransistors GeneralPurposeTransistors PNPSilicon FEATURE ●CollectorcurrentcapabilityIC=-500mA. ●Collector-emittervoltageVCEO(max)=-45V. ●Generalpurposeswitchingandamplification. ●NPNcomplement:BC817USeries. ●WedeclarethatthematerialofproductcompliancewithRoHSrequirem | FS First Silicon Co., Ltd | FS | ||
GeneralPurposeTransistors GeneralPurposeTransistors PNPSilicon FEATURE ●CollectorcurrentcapabilityIC=-500mA. ●Collector-emittervoltageVCEO(max)=-45V. ●Generalpurposeswitchingandamplification. ●NPNcomplement:BC817USeries. ●WedeclarethatthematerialofproductcompliancewithRoHSrequirem | FS First Silicon Co., Ltd | FS | ||
GeneralPurposeTransistors GeneralPurposeTransistors PNPSilicon FEATURE ●CollectorcurrentcapabilityIC=-500mA. ●Collector-emittervoltageVCEO(max)=-45V. ●Generalpurposeswitchingandamplification. ●NPNcomplement:BC817USeries. ●WedeclarethatthematerialofproductcompliancewithRoHSrequirem | FS First Silicon Co., Ltd | FS | ||
SurfacemountSi-EpitaxialPlanarTransistors SurfacemountSi-EpitaxialPlanarTransistors ?Powerdissipation225mW ?PlasticcaseSOT-323 ?Weightapprox.0.01g ?PlasticmaterialhasULclassification94V-0 ?Standardpackagingtapedandr | Diotec Diotec Semiconductor | Diotec | ||
PNPSiliconAFTransistors PNPSiliconAFTransistors ?ForgeneralAFapplications ?Highcollectorcurrent ?Highcurrentgain ?Lowcollector-emittersaturationvoltage ?Complementarytypes:BC817W,BC818W(NPN) | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
PNPSiliconEpitaxialPlanarTransistor FEATURES ●ForgeneralAFapplications. ●Highcollectorcurrent. ●Highcurrentgain. ●Lowcollector-emittersaturationvoltage. ●ComplementstheBC817W. APPLICATIONS ●Forgeneralpurposeamplificationandswitching. | BILINGalaxy Semi-Conductor Holdings Limited 銀河微電常州銀河世紀微電子股份有限公司 | BILIN | ||
PNPSiliconEpitaxialPlanarTransistors PNPSiliconEpitaxialPlanarTransistors forgeneralpurposeandswitchingapplications Thesetransistorsaresubdividedintothreegroups–16,-25,-40accordingtotheircurrentgain. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半導體先之科半導體科技（東莞）有限公司 | SEMTECH_ELEC | ||
EPITAXIALPLANARPNPTRANSISTOR GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES ?ComplementarytoBC817W. | KECKEC CORPORATION KEC株式會社 | KEC | ||
PNPgeneralpurposetransistor DESCRIPTION PNPtransistorinaSOT323plasticpackage,forgeneralswitchingandamplification. FEATURES ?Highcurrent ?S-minipackage. | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
TRANSISTOR(PNP) FEATURES ?Ldeallysuitedforautomaticinsertion ?epitaxialplanardieconstruction ?complementaryNPNtypeavailable(BC817) | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金譽半導體深圳市金譽半導體股份有限公司 | HTSEMI |
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