BF1012

Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network

SiliconN-ChannelMOSFETTetrode ?Forlownoise,highgaincontrolledinputstagesupto1GHz ?Operatingvoltage12V ?Integratedstabilizedbiasnetwork

BF1012

DC input,High Vceo,Creepage distance>8mm;

ETC

BF1012

Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network;

BF1012S

Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)

SiliconN-ChannelMOSFETTetrode ?Forlownoise,highgaincontrolledinputstagesupto1GHz ?Operatingvoltage5V ?Integratedstabilizedbiasnetwork

BF1012W

SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz)

SILICONN-CHANNELMOSFETTETRODE ?Forlow-noise,gain-controlledinputstagesupto1GHz ?Operatingvoltage12V ?IntegratedbiasNetwork

BF1012W

SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz);