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CNZ1108

PhotoInterrupters

PhotoInterrupters ForcontactlessSW,objectdetection Overview CNZ1102andCNZ1108areaphotocouplerinwhichahighefficiencyGaAsinfraredlightemittingdiodeisusedasthelightemittingelement,andahighsensitivityphototransistorisusedasthelightdetectingelement.The

PanasonicPanasonic Semiconductor

松下松下電器

CS1108

SingleLampDriverIC

ThisASICprovidesupto350mAofdrivecurrentforpoweringbulbs.Thetypicalapplicationforthispartisforuseinairbagsystemsusingatype194bulb.On–chipdiagnosticsprovideopencircuitandshortcircuitdetectionintheoutputonmode.Inaddition,theoutputdriverwillturnon(si

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

CS1108

SingleLampDriverIC

Description ThisASICprovidesupto350mAofdrivecurrentforpoweringbulbs.Thetypicalapplicationforthispartisforuseinairbagsystemsusingatype194bulb.On–chipdiagnosticsprovideopencircuitandshortcircuitdetectionintheoutputonmode.Inaddition,theoutputdriverwil

CHERRY

Cherry Semiconductor Corporation

CXG1108K

PowerAmplifierModuleforJCDMA

Description TheCXG1108Kisthepoweramplifiermodulewhichoperatesatasinglepowersupply.ThisICisdesignedusingtheSony’soriginalp-GateHFETprocess. Features ?Singlepowersupplyoperation: VDD1=VDD2=3.5V, VGG=2.95V(@Highmode), VGG=2.7V(@Lowmode) ?Ultras

SonySony Semiconductor Solutions Group

索尼

DMI1108

LeadedPowerChokesDMI

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

EDE1108AASE

1GbitsDDR2SDRAMorganizedas33,554,432wordsx8banks.

Description TheEDE1104AASEisa1GbitsDDR2SDRAMorganizedas33,554,432words×4bits×8banks. TheEDE1108AASEisa1GbitsDDR2SDRAMorganizedas16,777,216words×8bits×8banks.Theyarepackagedin68-ballFBGA(μBGA?)package. Features ?Powersupply:VDD,VDDQ=1.8V

ELPIDAElpida Memory

美光科技美光科技股份有限公司

EDE1108ABSE

1GbitsDDR2SDRAM

ELPIDAElpida Memory

美光科技美光科技股份有限公司

EDE1108ACBG

1GbitsDDR2SDRAM

ELPIDAElpida Memory

美光科技美光科技股份有限公司

EDE1108ACSE

1GbitsDDR2SDRAM

ELPIDAElpida Memory

美光科技美光科技股份有限公司

EDE1108AEBG

1GbitsDDR2SDRAM

ELPIDAElpida Memory

美光科技美光科技股份有限公司

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