BGA2870

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

恩XP

BGA2870

MMIC寬帶放大器

Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internalmatching circuit in a 6-pin SOT363 plastic SMD package.\n; Input internally matched to 50 Ω\nA gain of 31.1 dB at 500 MHz\nOutput power at 1 dB gain compression = 4 dBm\nSupply current = 16.0 mA at a supply voltage of 2.5 V\nReverse isolation > 52 dB up to 750 MHz\nGood linearity with low second order and third order products\nNoise figure = 3.5 dB at 500 M;

恩XP

BGA2870

MMIC wideband amplifier Internally matched to 50 廓

恩XP

CMT2870

Cree?XLamp?CMT2870LED

CMT2870

XLamp?CMT2870LED

FEATURES ?22?mmopticalsource ?Availablein70-,80-and90?and 95?minimumCRIoptions ?EasyWhite?2-,3-and5?stepbinning ?PremiumColor2-and3-stepbinning ?Forwardvoltageoption:54?Vclass ?85°Cbinningandcharacterization ?Maximumdrivecurrent:2800mA ?115°viewing

EMG2870D

8.89mmx8.89mmLEDLIGHTBAR