BGB540

Active Biased RF Transistor; ? Gms= 18dB at 1.8GHz\n? Small SOT343 package\n? Current easy adjustable by an external resistor\n? Open collector output\n? Typical supply voltage: 1.4-4.3V\n? SIEGET?-45 technologyApplications\n? For high gain low noise amplifiers\n? Ideal for wideband applications, cellular phones,\n?? cordless telephones, SAT-TV and high frequency\n?? oscillators;

Description\nSIEGET?-45 NPN Transistor with integrated biasing for high gain low noise figure applications. IC can be controlled using IBias according to IC=10*IBias.

BGB540

A 35 dB Gain-Sloped LNB I.F. Amplifier for Direct Broadcast Satellite Television Applications using the BGA430 & BGB540 Silicon MMICs

Description TheBGA430isabroadbandhighgainamplifierbaseduponInfineonTechnologies’SiliconBipolarTechnologyB6HF.HousedinasmallSOT363packagethisSiliconMonolithicMicrowaveIntegratedCircuit(MMIC)requiresveryfewexternalcomponentsduetotheintegratedbiasingconcept.

BGB540

Active Biased RF Transistor

Description SIEGET?-45NPNTransistorwithintegratedbiasingforhighgainlownoisefigureapplications.ICcanbecontrolledusingIBiasaccordingtoIC=10*IBias. Features ?Gms=18dBat1.8GHz ?SmallSOT343package ?Currenteasyadjustablebyanexternalresistor ?Opencollectoroutpu

BGB540LNA

BGB540 as a 1.85 GHz Low Noise Amplifier

BGB540asa1.85GHzLowNoiseAmplifier

BGB707L7ESD

INFINEON
TSLP7-1