BLM3401

金屬氧化物半導(dǎo)體場效應(yīng)管：P-Channel,單通道,-30V（VDS Limit）

This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package Excellent thermal and electrical capabilities.\n\n; ? High power and current handing capability\n? \n;

BLM3401

P-Channel Enhancement Mode Power MOSFET

BLM3401AY

溝槽柵金屬氧化物半導(dǎo)體場效應(yīng)管

\n The BLM3401AY uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.\n; ? ● High density cell design for ultra low Rdson\n? ● Fully characterized Avalanche voltage and current\n;

BLM3401AY

P-Channel Enhancement Mode Power MOSFET

BLM3401-ES

場效應(yīng)管(MOSFET)